When the integrated circuit (IC) feature size is reduced to 0.13 μm and below, copper (Cu)
becomes the new wiring material in interconnect materials. The double damascene process …

Chemical mechanical polishing slurry of copper usually contains more than four
compositions, in which strong acids, alkalis or hazardous chemicals are normally employed …

This article discusses advanced developments and applications of chemical mechanical
polishing (CMP) published recently in the selected papers indexed by Web of Science. The …

Oxygen-free copper (OFC) serves as a core component of high-end manufacturing, and
requires high surface quality. It is always a significant challenge to manufacture high-quality …

Atomic and close-to-atomic scale manufacturing is a new technology that can achieve
atomic-level manufacturing precision and functional critical dimension. Here we propose an …

Abstract Hydrogen peroxide (H 2 O 2) has been widely used to improve polishing
performance in chemical mechanical polishing (CMP) of silicon carbide (SiC), but the …

Ultraflat and damage-free single-crystal diamond is a promising material for use in electronic
devices such as field-effect transistors. Diamond surfaces are conventionally prepared by …

Molecular dynamics simulation is employed to analyze the effect of sliding, rolling and
oscillating movements on nanotribology properties of a diamond abrasive on a silicon …

In this paper, the polishing process of a silicon carbide (SiC) substrate covered with a thin
amorphous SiC (a-SiC) film is investigated by molecular dynamics simulation method. A …

In this paper, molecular dynamics simulation is applied to inspect the effect of sliding, rolling,
vibrating and rolling plus vibrating movements of a diamond abrasive on nanotribology …