[HTML][HTML] Ferroelectric field effect transistors: Progress and perspective
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation
devices as they can serve as a synaptic device for neuromorphic implementation and a one …
devices as they can serve as a synaptic device for neuromorphic implementation and a one …
Heterogeneous wafer bonding technology and thin-film transfer technology-enabling platform for the next generation applications beyond 5G
Wafer bonding technology is one of the most effective methods for high-quality thin-film
transfer onto different substrates combined with ion implantation processes, laser irradiation …
transfer onto different substrates combined with ion implantation processes, laser irradiation …
A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide
Neuromorphic computing on the hardware level is promising for performing ever‐increasing
data‐centric tasks owing to its superiority to conventional von Neumann architecture in terms …
data‐centric tasks owing to its superiority to conventional von Neumann architecture in terms …
Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements
W Xiao, C Liu, Y Peng, S Zheng, Q Feng… - Nanoscale research …, 2019 - Springer
The HfO 2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/
insulator/semiconductor (MFIS) gate stack is currently being considered as a possible …
insulator/semiconductor (MFIS) gate stack is currently being considered as a possible …
Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory
technology due to its promising operating speed and endurance. However, flipping the …
technology due to its promising operating speed and endurance. However, flipping the …
High-k HfxZr1-xO₂ Ferroelectric Insulator by Utilizing High Pressure Anneal
In this article, we report the fabrication of Zr-rich high-k ferroelectric hafnium zirconium oxide
(HZO) capacitor with TiN as the top and bottom electrodes demonstrating an equivalent …
(HZO) capacitor with TiN as the top and bottom electrodes demonstrating an equivalent …
Recent advances in negative capacitance FinFETs for low-power applications: a review
V Chauhan, DP Samajdar - IEEE Transactions on Ultrasonics …, 2021 - ieeexplore.ieee.org
In the contemporary era of Internet-of-Things (IoT), there is an extensive search for
competent devices which can operate at ultralow voltage supply. Due to the restriction of …
competent devices which can operate at ultralow voltage supply. Due to the restriction of …
Beyond Moore's law–A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics
Conventional FETs, although serving as the backbone of modern electronics, have
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
Near threshold capacitance matching in a negative capacitance FET with 1 nm effective oxide thickness gate stack
We report Negative Capacitance nFETs with a~ 1 nm effective oxide thickness (EOT) gate
stack. Experimental measurements show a clear steepening of the slope of the I DV G …
stack. Experimental measurements show a clear steepening of the slope of the I DV G …
High performance, amorphous InGaZnO thin-film transistors with ferroelectric ZrO2 gate insulator by one step annealing
Ferroelectric thin film transistors (FE-TFTs) are of increasing interest for next generation
memory applications. Post fabrication annealing plays a crucial role to induce ferroelectricity …
memory applications. Post fabrication annealing plays a crucial role to induce ferroelectricity …