Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …

Currently, a significant portion (~ 50%) of global warming emissions, such as CO2, are
related to energy production and transportation. As most energy usage will be electrical (as …

Abstract β-Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and
development for power electronic applications. This paper reviews state-of-the-art β-Ga 2 O …

Abstract β-Ga 2 O 3 metal–semiconductor field-effect transistors are realized with superior
reverse breakdown voltages (V BR) and ON currents (I DMAX). A sandwiched SiN x …

Maintaining high average fields between the gate and drain is imperative in achieving near
theoretical performance in ultra-wide band gap semiconductors like β-Ga 2 O 3. In this letter …

We demonstrate over 3 kV gate-pad-connected field plated (GPFP) β-Ga 2 O 3 lateral
MESFETs with high lateral figures of merit (LFOM) using metalorganic vapor phase epitaxy …

We report a vertical β-Ga2O3 Schottky barrier diode (SBD) with BaTiO3 as field plate oxide
on a low doped thick epitaxial layer exhibiting 2.1 kV breakdown voltage. A thick drift layer of …

In this letter, fin-shape tri-gate-Ga2O3 lateral MESFETs are demonstrated with a high power
figure of merit (PFOM) of 0.95 GW/cm2–a record high for any-Ga2O3 transistor to date. A low …

We report on the first demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE)
ohmic contacts in an all MOVPE-grown β-Ga 2 O 3 metal semiconductor field effect transistor …

Single α-phase (Al x Ga 1− x) 2 O 3 thin films are grown on m-plane sapphire (α-Al 2 O 3)
substrates via metalorganic chemical vapor deposition. By systematically tuning the growth …