The performances of FinFET, gate-all-around (GAA) nanowire/nanosheet, and U-shaped
FETs (UFETs) are studied targeting the 3-nm node (N3) and beyond CMOS dimensions. To …

Gate-all-around (GAA) is a promising MOSFET structure to continue scaling down the size of
CMOS devices beyond 7 nm technology node. This paper gives an overview of different …

With technology node scaling down to 5 nm, the narrow device geometry confines the
material thermal conductivity and further aggravates the self-heating effect in gate-all-around …

The gate-all-around (GAA) silicon nanosheet (SiNS) metal-oxide-semiconductor field-effect
transistor (MOSFET) structures have been recognized as excellent candidates to achieve …

In this work, an analytical model for fringe gate capacitance in complementary FET (CFET) is
proposed. Three kinds of CFET based on the fin, gate-all-around (GAA) nanowire, and …

This work shows the feasibility of a vertically stacked nanosheet field effect transistor
(NSFET) for charge-trapping memory and artificial synaptic devices. The artificial synapse's …

The self-heating effects in vacuum gate dielectric gate-all-around field effect transistors (GAA
FETs) with vertically stacked 4-nm silicon nanowire (SiNW) channels are investigated by 3-D …

In this work, a compact model for parasitic capacitances is proposed for Gate-All-Around
silicon nanosheet FET (GAAFET). For 3 stack GAAFET, all possible parasitic capacitance …

In this work, drain current ID for 7-nm gate length dual-material (DM) cylindrical gate all
around (CGAA) silicon nanowire (SiNW) has been studied and simulation results are …

In this paper, we propose a trench MOS architecture for the upcoming 5 nm node and
beyond logic transistor. The intended device has a gate formed vertically downward, with …