Site-controlled and advanced epitaxial Ge/Si quantum dots: Fabrication, properties, and applications
In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …
Triggered indistinguishable single photons with narrow line widths from site-controlled quantum dots
In this Letter, we present narrow line width (7 μeV), nearly background-free single-photon
emission (g (2)(0)= 0.02) and highly indistinguishable photons (V= 0.73) from site-controlled …
emission (g (2)(0)= 0.02) and highly indistinguishable photons (V= 0.73) from site-controlled …
Ultrahigh-resolution quantum dot patterning for advanced optoelectronic devices
Quantum dots have attracted significant scientific interest owing to their optoelectronic
properties, which are distinct from their bulk counterparts. In order to fully utilize quantum …
properties, which are distinct from their bulk counterparts. In order to fully utilize quantum …
Enhanced telecom emission from single group-IV quantum dots by precise CMOS-compatible positioning in photonic crystal cavities
Efficient coupling to integrated high-quality-factor cavities is crucial for the employment of
germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic …
germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic …
Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si (001) substrates
We identify the most important parameters for the growth of ordered SiGe islands on pit-
patterned Si (001) substrates. From a multi-dimensional parameter space we link individual …
patterned Si (001) substrates. From a multi-dimensional parameter space we link individual …
Broadband enhancement of light-matter interaction in photonic crystal cavities integrating site-controlled quantum dots
The fabrication of integrated quantum dot (QD)-optical microcavity systems is a requisite
step for the realization of a wide range of nanophotonic experiments (and applications) that …
step for the realization of a wide range of nanophotonic experiments (and applications) that …
Leveraging crystal anisotropy for deterministic growth of InAs quantum dots with narrow optical linewidths
Crystal growth anisotropy in molecular beam epitaxy usually prevents deterministic
nucleation of individual quantum dots when a thick GaAs buffer is grown over a …
nucleation of individual quantum dots when a thick GaAs buffer is grown over a …
Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits
We report on the structural and optical properties of single InAs quantum dots (QDs) formed
in etched GaAs pits with different dimensions. The site-controlled QDs were fabricated by …
in etched GaAs pits with different dimensions. The site-controlled QDs were fabricated by …
Self-formation of hexagonal nanotemplates for growth of pyramidal quantum dots by metalorganic vapor phase epitaxy on patterned substrates
We demonstrate the self-formation of hexagonal nanotemplates on GaAs (111) B substrates
patterned with arrays of inverted tetrahedral pyramids during metal-organic vapor phase …
patterned with arrays of inverted tetrahedral pyramids during metal-organic vapor phase …
In (Ga) As/GaAs site‐controlled quantum dots with tailored morphology and high optical quality
C Schneider, A Huggenberger, M Gschrey… - … status solidi (a), 2012 - Wiley Online Library
In this article, we describe epitaxial growth and investigations of optical properties of In (Ga)
As/GaAs site‐controlled quantum dots (QDs) fabricated on (001)‐oriented GaAs substrates …
As/GaAs site‐controlled quantum dots (QDs) fabricated on (001)‐oriented GaAs substrates …