Diamond Schottky barrier diodes show promise for high voltage, power, and temperature
applications due to the outstanding properties of diamond. However, there is still a lack of …

We fabricate p+-Si/p-diamond heterojunction diodes by using surface-activated bonding and
examine the electrical properties of Si/diamond interfaces by measuring current-voltage and …

We demonstrated the fabrication and operation of vertical diamond Schottky barrier diodes
(SBDs) by inserting an ultrathin lanthanum hexaboride (LaB 6) interlayer at the Zr/diamond …

Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with
Zr or ZrO 2 deposited on oxygen-terminated surfaces of (001)-oriented diamond films …

Diamond films were synthesized with up to 50% argon in the gas phase using high power
plasma‐assisted chemical vapour deposition (PACVD). This resulted in a strong increase of …

Electron spectro-microscopic methods were applied as direct methods of determining the
Schottky barrier heights (SBHs) and their spatial distribution for Au-and Ag-Schottky …

Herein, the effect of Yb, Al, Cu and Au metal substrates on the electrical performance of
germanium oxide-based devices is reported. Back-to-back Schottky-type metal-insulator …

Carrier trapping in a diamond Schottky barrier diode, consisting of a stack of ap− drift and p+
contact layer, is experimentally studied via subgap photocurrent measurements. In the …

Herein, SiO2 nanosheets with thicknesses of 25− 100 nm are used to enhance the
performance of Au/CdBr2 Schottky barriers. The Au/CdBr2/SiO2/Au straddling‐type …

This thesis was focused on high power diamond Schottky diodes fabrication. Diamond
growth and its doping are today well mastered. The advent of vertical architectures (diode …