Performance investigation of dynamic characteristics of power semiconductor diodes
P Špánik, R Šul, M Frívaldský, P Drgoňa… - Elektronika Ir …, 2010 - eejournal.ktu.lt
Utilization of SiC SBD diodes in DC-DC converter applications is discussed. First reverse
recovery effect of various diodes' structures and its elimination is being described …
recovery effect of various diodes' structures and its elimination is being described …
Analytical solution of the breakdown voltage for 6H‐silicon carbide p+n junction
DS Byeon, MK Han, YI Choi - Journal of applied physics, 1996 - pubs.aip.org
An analytical solution of the breakdown voltage for 6H-silicon carbide pn junction has been
derived by employing an effective ionization coefficient. The breakdown voltage extracted …
derived by employing an effective ionization coefficient. The breakdown voltage extracted …
Elimination of transistor's switching losses by diode reverse recovery in dedicated application
M Frivaldsky, R Sul - 2008 34th Annual Conference of IEEE …, 2008 - ieeexplore.ieee.org
This paper deals with reverse recovery effect of various diodespsila structures and its
elimination in dedicated applications. In principle it deals with the commutation process …
elimination in dedicated applications. In principle it deals with the commutation process …
Analysis of field of temperature of power electronic systems in COMSOL MULTIPHYSICS environment
P Špánik, J Čuntala, J Lakatoš, A Kondelová… - 2008 - otik.uk.zcu.cz
The paper deals with analysis of temperature field in power electronic devices using
COMSOL MULTIPHYSICS software. It includes relevant problem of designing, specifically a …
COMSOL MULTIPHYSICS software. It includes relevant problem of designing, specifically a …
[PDF][PDF] Investigation and Usage of SiC Technology for Power Electronics Applications
EN Ganesh - International Journal of VLSI Design and …, 2017 - scholar.archive.org
This paper is dedicated to the recent unprecedented boom of SiC electronic technology. The
contribution deals with a brief survey of those properties. In particular, the differences (both …
contribution deals with a brief survey of those properties. In particular, the differences (both …
[PDF][PDF] 3D Simulation of Heat Behavior of Transistor in Amplifier Power Stage
J Čuntala, P Špánik, A Kondelová - humusoft.cz
The paper presents dynamic analysis of power condition in push-pull transistor stage
designed in class B. The thermal power conditions of output transistors have been explored …
designed in class B. The thermal power conditions of output transistors have been explored …
IMPROVEMENT OF POWER ELECTRONIC STRUCTURE CHARACTERISTICS USING SiC TECHNOLOGY–OVERVIEW
BDPŠR Šul - THIN-FILM SILICON IN PHOTOVOLTAICS: THE ROLE … - ceeol.com
This paper is dedicated to the recent unprecedented boom of SiC electronic technology. The
contribution deals with a brief survey of those properties. In particular, the differences (both …
contribution deals with a brief survey of those properties. In particular, the differences (both …
Nowe materiały półprzewodnikowe do produkcji przyrządów energoelektronicznych
S Januszewski - Prace Instytutu Elektrotechniki, 2002 - infona.pl
Dokonano przeglądu osiągnięć, opublikowanych w materiałach konferencyjnych oraz
czasopismach technicznych dotyczących przyrządów energoelektronicznych wytworzonych …
czasopismach technicznych dotyczących przyrządów energoelektronicznych wytworzonych …