The existence of global-in-time weak solutions to a quantum energy-transport model for
semiconductors is proved. The equations are formally derived from the quantum …

The authors study the existence and long-time behavior of weak solutions to the bipolar
transient quantum drift-diffusion model, a fourth order parabolic system. Using semi …

This paper is concerned with the global well-posedness and relaxation-time limits for the
solutions in the full quantum hydrodynamic model, which can be used to analyze the thermal …

We give an overview of analytic investigations of quantum semiconductor models, where we
focus our attention on two classes of models: quantum drift diffusion models, and quantum …

This paper discusses a time global existence, asymptotic behavior and a singular limit of a
solution to the initial boundary value problem for a quantum drift-diffusion model of …

A fourth order parabolic system, the bipolar quantum drift-diffusion model in semiconductor
simulation, with physically motivated Dirichlet-Neumann boundary condition is studied in …

We establish the global weak solutions to quantum drift-diffusion model, a fourth order
parabolic system, in two or there space dimensions with large initial value and periodic …

The existence of classical solutions to the one-dimensional stationary quantum drift–
diffusion model for semiconductor devices is investigated. The proof is based on an …

We study the existence of weak solution and semiclassical limit for mixed Dirichlet-Neumann
boundary value problem of 1, 2, 3-dimensional isentropic transient quantum drift-diffusion …

一维半导体量子能量输运模型稳态解的唯一性 数学杂志 2015, Vol. 35 Issue (5): 1245-1251
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