[HTML][HTML] Multifunctional epitaxial systems on silicon substrates

SR Singamaneni, JT Prater, J Narayan - Applied Physics Reviews, 2016 - pubs.aip.org
Multifunctional heterostructures can exhibit a wide range of functional properties, including
colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display …

Integration of epitaxial permalloy on Si (1 0 0) through domain matching epitaxy paradigm

SS Rao, JT Prater, F Wu, S Nori, D Kumar… - Current Opinion in Solid …, 2014 - Elsevier
This paper addresses epitaxial integration of magnetic materials with Si (1 0 0) based solid
state devices. Epitaxial Ni 82.5 Fe 17.5 (permalloy, Py) thin films have been synthesized by …

Magnetic and electrical characterization of nickel-rich NiFe thin films synthesized by atomic layer deposition and subsequent thermal reduction

AP Espejo, R Zierold, J Gooth, J Dendooven… - …, 2016 - iopscience.iop.org
Nickel-rich NiFe thin films (Ni 92 Fe 8, Ni 89 Fe 11 and Ni 83 Fe 17) were prepared by
combining atomic layer deposition (ALD) with a subsequent thermal reduction process. In …

[HTML][HTML] Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20

M Kateb, JT Gudmundsson, S Ingvarsson - AIP advances, 2019 - pubs.aip.org
We investigate the effect of atomic ordering on the magnetic anisotropy of Ni 80 Fe 20
at.%(Py). To this end, Py films were grown epitaxially on MgO (001) using dc magnetron …

[HTML][HTML] Interfacial electronic structure at rubrene/NiFe heterostructure

P Yuan, Y Liu, H Xie, J Wei, Y Zhao, S Wang, Y Zhang… - Results in Physics, 2021 - Elsevier
The interface electronic structure between rubrene and permalloy (Ni 80 Fe 20) has been
studied by ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron …

Evaluation of electrical, mechanical properties, and surface roughness of DC sputtering nickel-iron thin films

CL Tien, TW Lin, KC Yu, TY Tsai… - IEEE transactions on …, 2014 - ieeexplore.ieee.org
The NiFe thin films were prepared at room temperature by DC sputtering technique from a
NiFe target onto silicon wafer, NBK7 and STIM35 glass substrates. The optimal deposition …

Positive exchange bias in epitaxial permalloy/MgO integrated with Si (1 0 0)

SS Rao, JT Prater, F Wu, S Nori, D Kumar, L Yue… - Current Opinion in Solid …, 2014 - Elsevier
In magnetic random access memory (MRAM) devices, soft magnetic thin film elements such
as permalloy (Py) are used as unit cells of information. The epitaxial integration of these …

Quantum spin-wave materials, interface effects and functional devices for information applications

J Xu, L Jin, Z Liao, Q Wang, X Tang, Z Zhong… - Frontiers in …, 2020 - frontiersin.org
With the continuous miniaturization of electronic devices and the increasing speed of their
operation, solving a series of technical issues caused by high power consumption has …

Texture and interface characterization of iridium thin films grown on MgO substrates with different orientations

L Trupina, L Nedelcu, MG Banciu, A Crunteanu… - Journal of Materials …, 2020 - Springer
Iridium thin films are grown by direct-current plasma magnetron sputtering, on MgO single-
crystal substrates with various surface orientations, ie (100),(111), and (110). The surface …

Epitaxial growth of metastable hcp-Ni and hcp-NiFe thin films on Au (100) fcc single-crystal underlayers and their structure characterization

M Ohtake, Y Sato, J Higuchi, T Tanaka… - Japanese Journal of …, 2011 - iopscience.iop.org
Metastable hcp-Ni and hcp-NiFe epitaxial thin films are prepared on Au (100) fcc single-
crystal underlayers by molecular beam epitaxy. The epitaxial growth and the transformation …