Ferroelectric memories have attracted great attention for data storage, and ferroelectric
polymers have been widely studied with the development of flexible and wearable devices …

As one of the five basic components in a modern computer system, memory plays a key role
in data storage while the Von Neumann architecture still occupies a principal position in …

Developing new memory concepts and devices has been one of the most productive fields
of research for the past decade. There is a need for a nonvolatile memory technology based …

Ferroelectric tunnel junctions (FTJs) are ideal resistance‐switching devices due to their
deterministic behavior and operation at low voltages. However, FTJs have remained mostly …

Polymeric nanocomposite thin films of magnetic nanoparticles blended with the ferroelectric
polymer poly (vinylidene fluoride-co-trifluoroethylene)(P (VDF-TrFE)) are promising …

Despite the realization of ferroelectricity in the δ-phase of poly (vinyleden difluoride)(PVDF)
nearly four decades ago, the dynamics of polarization switching has not been studied yet …

Blended films of insulating polymer-ferroelectrics with a dilute proportion of polymer
semiconductors in a device structure exhibit memristor features. High current magnitudes …

The memristor of sandwich structure is prepared by employing the ferroelectric copolymer
poly (vinylidene fluoride/trifluoroethylene)(P (VDF‐TrFE)). The device exhibits great bipolar …

Organic electronic devices have the potential to alter our everyday lives with their unique
characteristics, such as flexibility, stretchability and low-cost. Among the envisioned devices …

Solution processed Organic Ferroelectric Memory Diodes (OFMDs) are one of the most
promising non-volatile memory elements for large area flexible electronics [1]-[4]. In OFMDs …