The design and fabrication of nanostructured materials to control both thermal and electrical
properties are demonstrated for high-performance thermoelectric conversion. We have …

Results of investigations into surface processes of the formation of germanium and silicon
nanostructures are analyzed. A mechanism of three-dimensional island nucleation and …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

Phonon transport in Si films was controlled using epitaxially-grown ultrasmall Ge nanodots
(NDs) with ultrahigh density for the purpose of developing Si-based thermoelectric materials …

We thoroughly investigated carrier and phonon transports related to thermoelectric
properties using absolutely-controlled Si nanostructures, namely Si films containing epitaxial …

Scanning tunneling spectroscopic studies revealed the quantum-confinement effects in Ge
nanocrystals formed with ultrahigh density 1012 cm− 2 by Ge deposition on ultrathin Si …

A sheet of spherical, well-separated, crystalline Ge nanodots embedded in SiO 2 on top of a
p-(001) Si wafer was fabricated by molecular beam epitaxy (MBE) combined with rapid …

We demonstrate that Ge can be selectively grown on Si (100) through openings in a SiO 2
nanotemplate by solid source molecular beam epitaxy. The selectivity relies on the thermal …

The authors observed a quantum-confinement effect in individual Ge 1− x Sn x quantum
dots (QDs) on Si (111) substrates covered with ultrathin Si O 2 films using scanning …

The solid-state dewetting phenomenon in Ge layers on SiO2 is investigated as a function of
layer thickness d Ge (from 10 to 86 nm) and annealing temperature. The dewetting is …