Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …
much attention due to their technological potential in terms of scalability, high-speed, and …
On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability
Ferroelectric field-effect transistors (FeFETs) have become an attractive technology for
memory and emerging applications on a silicon electronic platform after the discovery of the …
memory and emerging applications on a silicon electronic platform after the discovery of the …
[HTML][HTML] Low-dimensional halide perovskites for advanced electronics
Halide perovskites are gaining prominence as promising materials for future electronic
applications, primarily due to their unique properties including long carrier diffusion lengths …
applications, primarily due to their unique properties including long carrier diffusion lengths …
Impact of back gate-drain overlap on DC and analog/HF performance of a ferroelectric negative capacitance double gate TFET
AK Pathakamuri, CK Pandey - Physica Scripta, 2023 - iopscience.iop.org
In this manuscript, we present a negative capacitance TFET with extended back gate-drain
overlap (DEBG-NC-TFET) to enhance DC and analog/high frequency (HF) performance …
overlap (DEBG-NC-TFET) to enhance DC and analog/high frequency (HF) performance …
Effect of curie temperature on electrical parameters of NC-FinFET and digital switching application of NC-FinFET
Power consumption of the device enhances as temperature rises, degrading the
performance of conventional MOSFET. In the present paper the performance parameters of …
performance of conventional MOSFET. In the present paper the performance parameters of …
Ferroelectric-Antiferroelectric Transition of Hf1–xZrxO2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2
The ferroelectric (FE)–antiferroelectric (AFE) transition in Hf1–x Zr x O2 (HZO) is for the first
time shown in a metal–ferroelectric–semiconductor (MFS) stack based on the III-V material …
time shown in a metal–ferroelectric–semiconductor (MFS) stack based on the III-V material …
HZO scaling and fatigue recovery in FeFET with low voltage operation: Evidence of transition from interface degradation to ferroelectric fatigue
Thickness scaling of FeFETs with Hf 0.5 Zr 0.5 O 2 (HZO) from 11 down to 4.6~nm is
systematically studied in this work in terms of the memory characteristics and the memory …
systematically studied in this work in terms of the memory characteristics and the memory …
An analytical interpretation of the memory window in ferroelectric field-effect transistors
In this study, we present an analytical equation for describing the memory window of
ferroelectric field-effect transistors (FeFETs). The analytical equation is derived based on the …
ferroelectric field-effect transistors (FeFETs). The analytical equation is derived based on the …
Ferroelectric source follower for voltage-sensing nonvolatile memory and computing-in-memory
Memory arrays and computing-in-memory architecture based on emerging nonvolatile
memory devices with a current-sensing scheme face several challenges when implemented …
memory devices with a current-sensing scheme face several challenges when implemented …
Wide-range Threshold Voltage Tunable β-Ga2O3 FETs with a Sputtered AlScN Ferroelectric Gate Dielectric
In this study, we demonstrate a-Ga2O3 ferroelectric field-effect transistor (Fe-FET) using a
sputtered aluminum scandium nitride (AlScN) gate dielectric. The device exhibits a steep …
sputtered aluminum scandium nitride (AlScN) gate dielectric. The device exhibits a steep …