A strategic review on gallium oxide based power electronics: Recent progress and future prospects

D Kaur, A Ghosh, M Kumar - Materials Today Communications, 2022 - Elsevier
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …

Tutorial: Metalorganic chemical vapor deposition of β-Ga2O3 thin films, alloys, and heterostructures

AFM Bhuiyan, Z Feng, L Meng, H Zhao - Journal of Applied Physics, 2023 - pubs.aip.org
ABSTRACT β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG)
semiconductor with a bandgap energy of∼ 4.8 eV and a predicted high critical electric field …

High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes

S Saha, L Meng, DS Yu… - Journal of Vacuum …, 2024 - pubs.aip.org
We report on the growth of Si-doped homoepitaxial β-Ga 2 O 3 thin films on (010) Ga 2 O 3
substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium …

Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD

PP Sundaram, F Liu, F Alema, A Osinsky… - Applied Physics …, 2023 - pubs.aip.org
Growing a thick high-quality epitaxial layer on the β-Ga 2 O 3 substrate is crucial in
commercializing β-Ga 2 O 3 devices. Metal organic chemical vapor deposition (MOCVD) is …

Special topic on Wide-and ultrawide-bandgap electronic semiconductor devices

J Würfl, T Palacios, HG Xing, Y Hao… - Applied Physics …, 2024 - pubs.aip.org
Despite the tremendous progress on wide-bandgap materials in the last few decades,
devices made of these materials are still far from their maximum theoretical performance …

Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm− 3) high-mobility (010) β-Ga2O3 drift layers

A Bhattacharyya, C Peterson… - Applied Physics …, 2024 - pubs.aip.org
This work reports high carrier mobilities and growth rates simultaneously in low
unintentionally doped (UID)(10 15 cm− 3) metalorganic chemical vapor deposition …

[HTML][HTML] Radiation resilience of β-Ga2O3 Schottky barrier diodes under high dose gamma radiation

SA Khan, S Saha, U Singisetti… - Journal of Applied …, 2024 - pubs.aip.org
A systematic investigation of the electrical characteristics of β-Ga 2 O 3 Schottky barrier
diodes (SBDs) has been conducted under high-dose 60 Co gamma radiation, with total …

MOCVD Growth of Thick β-(Al) GaO Films with Fast Growth Rates

L Meng, AFMAU Bhuiyan, DS Yu, HL Huang… - Crystal Growth & …, 2023 - ACS Publications
In this work, we investigated the epitaxial growth of (010) β-Ga2O3 and β-(Al x Ga1–x) 2O3
films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) …

MOCVD growth and band offsets of κ-phase Ga2O3 on c-plane sapphire, GaN-and AlN-on-sapphire, and (100) YSZ substrates

AFM Bhuiyan, Z Feng, HL Huang, L Meng… - Journal of Vacuum …, 2022 - pubs.aip.org
Epitaxial growth of κ-phase Ga 2 O 3 thin films is investigated on c-plane sapphire, GaN-and
AlN-on-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via …

Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K)

H Sheoran, JK Kaushik, R Singh - Materials Science in Semiconductor …, 2023 - Elsevier
In this study, we have experimentally investigated the temperature endurance capability of
high-quality Pt-based Schottky Barrier Diodes (SBDs) fabricated on halide vapor phase …