A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …
switching speeds, leading to rampant research in the field of next generation wide bandgap …
Tutorial: Metalorganic chemical vapor deposition of β-Ga2O3 thin films, alloys, and heterostructures
ABSTRACT β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG)
semiconductor with a bandgap energy of∼ 4.8 eV and a predicted high critical electric field …
semiconductor with a bandgap energy of∼ 4.8 eV and a predicted high critical electric field …
High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes
We report on the growth of Si-doped homoepitaxial β-Ga 2 O 3 thin films on (010) Ga 2 O 3
substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium …
substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium …
Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD
Growing a thick high-quality epitaxial layer on the β-Ga 2 O 3 substrate is crucial in
commercializing β-Ga 2 O 3 devices. Metal organic chemical vapor deposition (MOCVD) is …
commercializing β-Ga 2 O 3 devices. Metal organic chemical vapor deposition (MOCVD) is …
Special topic on Wide-and ultrawide-bandgap electronic semiconductor devices
J Würfl, T Palacios, HG Xing, Y Hao… - Applied Physics …, 2024 - pubs.aip.org
Despite the tremendous progress on wide-bandgap materials in the last few decades,
devices made of these materials are still far from their maximum theoretical performance …
devices made of these materials are still far from their maximum theoretical performance …
Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm− 3) high-mobility (010) β-Ga2O3 drift layers
A Bhattacharyya, C Peterson… - Applied Physics …, 2024 - pubs.aip.org
This work reports high carrier mobilities and growth rates simultaneously in low
unintentionally doped (UID)(10 15 cm− 3) metalorganic chemical vapor deposition …
unintentionally doped (UID)(10 15 cm− 3) metalorganic chemical vapor deposition …
[HTML][HTML] Radiation resilience of β-Ga2O3 Schottky barrier diodes under high dose gamma radiation
A systematic investigation of the electrical characteristics of β-Ga 2 O 3 Schottky barrier
diodes (SBDs) has been conducted under high-dose 60 Co gamma radiation, with total …
diodes (SBDs) has been conducted under high-dose 60 Co gamma radiation, with total …
MOCVD Growth of Thick β-(Al) GaO Films with Fast Growth Rates
In this work, we investigated the epitaxial growth of (010) β-Ga2O3 and β-(Al x Ga1–x) 2O3
films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) …
films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) …
MOCVD growth and band offsets of κ-phase Ga2O3 on c-plane sapphire, GaN-and AlN-on-sapphire, and (100) YSZ substrates
Epitaxial growth of κ-phase Ga 2 O 3 thin films is investigated on c-plane sapphire, GaN-and
AlN-on-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via …
AlN-on-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via …
Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K)
In this study, we have experimentally investigated the temperature endurance capability of
high-quality Pt-based Schottky Barrier Diodes (SBDs) fabricated on halide vapor phase …
high-quality Pt-based Schottky Barrier Diodes (SBDs) fabricated on halide vapor phase …