Germanium (Ge) has played a key role in silicon photonics as an enabling material for
datacom applications. Indeed, the unique properties of Ge have been leveraged to develop …

The coupling between light and collective oscillations of free carriers at metallic surfaces
and nanostructures is at the origin of one of the main fields of nanophotonics: plasmonics …

The design, modeling, micro-fabrication, and characterization of an ultra-broadband Ge-on-
Si waveguide polarization rotator are presented. The polarization rotator is based on the …

The fabrication of highly doped and high quality Ge layers is a challenging and hot topic for
advancements in nanoelectronics, photonics and radiation detectors. In this article, we …

Despite the recent introduction of heavily doped semiconductors for mid-infrared
plasmonics, it still remains an open issue whether such materials can compete with noble …

We demonstrate third harmonic generation in plasmonic antennas consisting of highly
doped germanium grown on silicon substrates and designed to be resonant in the mid …

The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings
new challenges related to the metastability of this class of materials. As a matter of fact …

In this work we theoretically investigate the possibility of observing strong coupling at mid-
infrared frequencies within the group-IV semiconductor material platform. Our results show …

The doping dependence of the most important optical transitions in n-type Ge (E 0, E ind, E
1, E 1+ Δ 1, E 0′, and E 2) has been studied using photoluminescence and UV-Vis …

Plasmonic structures made out of highly doped group-IV semiconductor materials are of
large interest for the realization of fully integrated mid-infrared (MIR) devices. Utilizing highly …