Overview of high voltage SiC power semiconductor devices: Development and application
Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has
attracted much attention in recent years. This paper overviews the development and status …
attracted much attention in recent years. This paper overviews the development and status …
Changes and challenges of photovoltaic inverter with silicon carbide device
High efficiency, high power density, and high reliability are always the technical trends of
converters for renewable energy applications. Silicon carbide (SiC) devices can break …
converters for renewable energy applications. Silicon carbide (SiC) devices can break …
Highly compact isolated gate driver with ultrafast overcurrent protection for 10 kV SiC MOSFETs
Silicon Carbide (SiC) semiconductor technology offers the possibility to manufacture power
devices with un-precedented blocking voltages in the range of 10... 15 kV and superior …
devices with un-precedented blocking voltages in the range of 10... 15 kV and superior …
Short-Circuit Characterization and Protection of 10-kV SiC mosfet
This paper presents the characterization of the temperature-dependent short-circuit
performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting …
performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting …
Assessment of 10 kV, 100 A Silicon Carbide mosfet Power Modules
D Johannesson, M Nawaz… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
This paper presents a thorough characterization of 10 kV SiC MOSFET power modules,
equipped with third-generation mosfet chips and without external free-wheeling diodes …
equipped with third-generation mosfet chips and without external free-wheeling diodes …
Short-circuit degradation of 10-kV 10-A SiC MOSFET
The short-circuit behavior of power devices is highly relevant for converter design and fault
protection. In this paper, the degradation during short circuit of a 10-kV 10-A 4H-SiC …
protection. In this paper, the degradation during short circuit of a 10-kV 10-A 4H-SiC …
Short Circuit Protection of Silicon Carbide MOSFETs: Challenges, Methods, and Prospects
With the fabulous growth of the renewable energy industry, silicon carbide (SiC) metal-oxide-
semiconductor field-effect transistors (mosfet s) are increasingly finding applications in …
semiconductor field-effect transistors (mosfet s) are increasingly finding applications in …
Comprehensive analysis and improvement methods of noise immunity of desat protection for high voltage SiC MOSFETs with high dv/dt
This paper comprehensively analyzes desaturation (desat) protection for high voltage (> 3.3
kV) silicon carbide (SiC) MOSFETs and especially how to build in noise immunity under high …
kV) silicon carbide (SiC) MOSFETs and especially how to build in noise immunity under high …
Comparative assessment of 3.3 kV/400A SiC MOSFET and Si IGBT power modules
C Ionita, M Nawaz, K Ilves… - 2017 IEEE Energy …, 2017 - ieeexplore.ieee.org
In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a
3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a …
3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a …
Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module
C Ionita, M Nawaz, K Ilves… - 2017 IEEE Energy …, 2017 - ieeexplore.ieee.org
While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely
encountered in the scientific literature, there is not so much research dealing with the …
encountered in the scientific literature, there is not so much research dealing with the …