The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …

Solid-state qubits have recently advanced to the level that enables them, in principle, to be
scaled up into fault-tolerant quantum computers. As these physical qubits continue to …

GaN and related materials (especially AlGaN) have recently attracted a lot of interest for
applications in high power electronics capable of operation at elevated temperatures …

A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented
along with critical issues pertaining to each semiconductor material. Au-based alloys (eg …

Reflecting changes in the field in the ten years since the publication of the first edition, The
Handbook of Photonics, Second Edition explores recent advances that have affected this …

Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …

GaN has been the topic of intense research and development activities during the past
years. These activities have demonstrated that GaN has great potential for both …

This comprehensive review is concerned with studies regarding ion implanted gallium
nitride (GaN) and focuses on the improvements made in recent years. It is divided into three …

A metallization scheme has been developed for obtaining low ohmic contacts to n-GaN with
a low contact resistance. The metal contact is a Ti/Al/Ti/Au composite with layers that are …