Micro light‐emitting diode (Micro‐LED) display is an emerging display technology thanks to
its high brightness, fast switching speed, and low power consumption. The …

In recent years, a novel epitaxial method based on Quasi-van der Waals (QvdW) force to
epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials …

A solid‐state lithium‐ion battery, in which all components (current collector, anode and
cathode, electrolyte, and packaging) are stretchable, is introduced, giving rise to a battery …

Due to the untiring efforts of scientists and researchers on oxide semiconductor materials,
processes, and devices, the applications for oxide-based thin film transistors (TFTs) have …

Hetero-integration of functional semiconductor layers and devices has received strong
research interest from both academia and industry. While conventional techniques such as …

A vertical integration of indium gallium nitride/gallium nitride (InGaN/GaN)-based microlight-
emitting diode (μLED) and GaN ultraviolet bipolar junction transistor (BJT) phototransistor …

Flexible GaN-based micron-size light-emitting diodes (μLEDs) with high brightness and low
power-consumption are a promising technology for next-generation wearable displays …

Amphiphobic surfaces are repellent to water and oils, which are usually developed on rigid
materials. The numerous advantages of flexible materials over rigid materials, especially the …

We propose a key factor associated with both surface recombination velocity and radiative
efficiency of an LED to estimate its chip size-dependent radiative efficiencies. The validity of …

The rapidly developing III-nitrides materials and devices technologies are driving the
advancements in hybrid heterogeneous structures for multi-material and multifunctional …