Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated
with a phosphorus pentoxide (P 2 O 5⁠) surface passivation treatment performed on the SiC …

Trench termination with SiO 2-encapsulated dielectric for 4H-SiC devices is proposed and
experimentally demonstrated. The trench is mainly refilled with spin-on dielectric which is …

Schottky barrier height of the diodes prepared on Au/Ni/4H-SiC for surface barrier detectors
were studied by electrical methods of IV and CV measurements. Analysis of three …

In this work, we studied different proportions of Mo-C alloy Schottky contacts. Compare the
electrical characteristics and SiC interface with the Mo/4H-SiC based diodes. The Schottky …

Termination design for 4H-SiC super-junction devices based on “trench-etching and
implantation” technology, has been discussed through 3D numeric simulations and …

We used a 193-nm ArF excimer laser to produce a surface functional layer with a tunable
Schottky barrier height (SBH) on the n-type 4H-SiC surface. The SBHs of the laser-modified …

Abstract The Ni-based 4H–SiC Schottky barrier diodes (SBDs) with Si intercalation have
been investigated. The electrical properties of SBDs are characterized by temperature …

Schottky barrier diodes (SBD) were fabricated on SiC surfaces that had been treated with
different surface passivation techniques, so that metal-semiconductor analysis could be …

An ultra-high voltage SiC JBS (silicon carbide junction barrier Schottky) rectifier utilizing a
novel area-efficient multi-zone gradient modulated field limiting ring (MGM-FLR) technique …

A comparative investigation on the effects of sacrificial oxidation (SO) on the surface
properties of n-and p-type 4H-SiC has been conducted by using x-ray photoelectron …