A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications
This article presents a set of measured benchmarks for the noise and gain performance of
six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility …
six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility …
Surmounting W-band scalar load-pull limitations using the ASM-HEMT model for millimeter-wave GaN HEMT technology large-signal assessment
This paper presents for the first time an accurate ASM-HEMT model for millimeter-wave GaN
HEMT technology validated with W-band scalar load-pull and power sweep measurements …
HEMT technology validated with W-band scalar load-pull and power sweep measurements …
[HTML][HTML] Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies
P Neininger, M Mikulla, P Döring, M Dammann… - e-Prime-Advances in …, 2023 - Elsevier
In this paper, we outline the current state of the art and trends for future development in
millimeter-wave (mmw) amplifiers based on gallium nitride (GaN) semiconductors. To that …
millimeter-wave (mmw) amplifiers based on gallium nitride (GaN) semiconductors. To that …
W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz
FE Arkun, D Denninghoff, H Tran, R Tran… - 2023 Device …, 2023 - ieeexplore.ieee.org
We report on deeply scaled AlN/GaN HEMTs demonstrating power added efficiency (PAE)
of 56% and 780 mW/mm output power at 94 GHz. This high transistor efficiency at W-band is …
of 56% and 780 mW/mm output power at 94 GHz. This high transistor efficiency at W-band is …
Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications
D Denninghoff, E Arkun, JS Moon… - 2023 IEEE BiCMOS …, 2023 - ieeexplore.ieee.org
Aggressively scaled gallium nitride (GaN) high-electron-mobility transistor (HEMT)
technologies with 40 nm T-gate lengths and extremely scaled ohmic-regrowth source-drain …
technologies with 40 nm T-gate lengths and extremely scaled ohmic-regrowth source-drain …
Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process
D Fanning, A Corrion, G Siddiqi, S Nadri… - 2023 IEEE BiCMOS …, 2023 - ieeexplore.ieee.org
Future microelectronics systems will rely on gallium nitride (GaN) devices able to operate at
higher frequencies. Smaller gate length nodes enable such applications but have their own …
higher frequencies. Smaller gate length nodes enable such applications but have their own …
Low-Voltage Operation AlInN/GaN HEMTs on Si with High Output Power at sub-6 GHz
K Takeuchi, K Saruta, S Morita… - 2023 IEEE/MTT-S …, 2023 - ieeexplore.ieee.org
This paper describes the DC and RF performance of AlInN/GaN HEMTs on Si substrates for
low-voltage operation to meet the demand of user equipment. By adapting the regrowth …
low-voltage operation to meet the demand of user equipment. By adapting the regrowth …
A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications (Preprint)
NC Miller, A Arias-Purdue, CM King, PV Rowell… - 2023 - apps.dtic.mil
This paper presents a set of measured benchmarks for the noise and gain performance of
six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility …
six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility …
[PDF][PDF] e-Prime-Advances in Electrical Engineering, Electronics and Energy
P Neininger, M Mikulla, P Döring, M Dammann… - publica-rest.fraunhofer.de
In this paper, we outline the current state of the art and trends for future development in
millimeter-wave (mmw) amplifiers based on gallium nitride (GaN) semiconductors. To that …
millimeter-wave (mmw) amplifiers based on gallium nitride (GaN) semiconductors. To that …