Progress, challenges, and opportunities for HgCdTe infrared materials and detectors
This article presents a review on the current status, challenges, and potential future
development opportunities for HgCdTe infrared materials and detector technology. A brief …
development opportunities for HgCdTe infrared materials and detector technology. A brief …
High-mobility Si and Ge structures
F Schäffler - Semiconductor Science and Technology, 1997 - iopscience.iop.org
Silicon-based heterostructures have come a long way from the discovery of strain as a new
and essential parameter for band structure engineering to the present state of electron and …
and essential parameter for band structure engineering to the present state of electron and …
[图书][B] Molecular beam epitaxy: fundamentals and current status
MA Herman, H Sitter - 2012 - books.google.com
Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-
quality semiconductor devices. It discusses the most important aspects of the MBE …
quality semiconductor devices. It discusses the most important aspects of the MBE …
[图书][B] Physics of semiconductors
M Grundmann - 2010 - Springer
Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …
have enabled economically reasonable fiber-based optical communication, optical storage …
[图书][B] Heteroepitaxy of semiconductors: theory, growth, and characterization
In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …
explosive growth of the electronics industry and the development of a myriad of …
Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials
D Zubia, SD Hersee - Journal of applied physics, 1999 - pubs.aip.org
This article describes an approach to the heteroepitaxy of lattice mismatched
semiconductors, that we call nanoheteroepitaxy. The theory developed here shows that the …
semiconductors, that we call nanoheteroepitaxy. The theory developed here shows that the …
Elastically relaxed free-standing strained-silicon nanomembranes
Strain plays a critical role in the properties of materials. In silicon and silicon–germanium,
strain provides a mechanism for control of both carrier mobility and band offsets. In materials …
strain provides a mechanism for control of both carrier mobility and band offsets. In materials …
An epitaxial model for heterogeneous nucleation on potent substrates
Z Fan - Metallurgical and Materials Transactions A, 2013 - Springer
In this article, we present an epitaxial model for heterogeneous nucleation on potent
substrates. It is proposed that heterogeneous nucleation of the solid phase (S) on a potent …
substrates. It is proposed that heterogeneous nucleation of the solid phase (S) on a potent …
[图书][B] Extended defects in semiconductors: electronic properties, device effects and structures
DB Holt, BG Yacobi - 2007 - books.google.com
The elucidation of the effects of structurally extended defects on electronic properties of
materials is especially important in view of the current advances in electronic device …
materials is especially important in view of the current advances in electronic device …
SiGe nanostructures
I Berbezier, A Ronda - Surface Science Reports, 2009 - Elsevier
Since the first studies in the late 1970s most of the researches on Si1− xGex nanostructures
have been motivated by their potential applications in micro, opto and nanoelectronic …
have been motivated by their potential applications in micro, opto and nanoelectronic …