This article presents a review on the current status, challenges, and potential future
development opportunities for HgCdTe infrared materials and detector technology. A brief …

Silicon-based heterostructures have come a long way from the discovery of strain as a new
and essential parameter for band structure engineering to the present state of electron and …

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-
quality semiconductor devices. It discusses the most important aspects of the MBE …

Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

This article describes an approach to the heteroepitaxy of lattice mismatched
semiconductors, that we call nanoheteroepitaxy. The theory developed here shows that the …

Strain plays a critical role in the properties of materials. In silicon and silicon–germanium,
strain provides a mechanism for control of both carrier mobility and band offsets. In materials …

In this article, we present an epitaxial model for heterogeneous nucleation on potent
substrates. It is proposed that heterogeneous nucleation of the solid phase (S) on a potent …

The elucidation of the effects of structurally extended defects on electronic properties of
materials is especially important in view of the current advances in electronic device …

Since the first studies in the late 1970s most of the researches on Si1− xGex nanostructures
have been motivated by their potential applications in micro, opto and nanoelectronic …