A comprehensive overview of the temperature-dependent modeling of the high-power GaN HEMT technology using mm-wave scattering parameter measurements
The gallium-nitride (GaN) high electron-mobility transistor (HEMT) technology has emerged
as an attractive candidate for high-frequency, high-power, and high-temperature …
as an attractive candidate for high-frequency, high-power, and high-temperature …
Comprehensive investigation and comparative analysis of machine learning-based small-signal modelling techniques for GaN HEMTs
A number of machine learning (ML) algorithm based small signal modeling of Gallium
Nitride (GaN) High Electron Mobility Transistors (HEMTs) have been reported in literature …
Nitride (GaN) High Electron Mobility Transistors (HEMTs) have been reported in literature …
On efficient modeling of drain current for designing high-power GaN HEMT-based circuits
In this paper, different modeling approaches to the drain current, including analytical and
artificial neural network (ANN) modeling, are investigated. The adopted models address the …
artificial neural network (ANN) modeling, are investigated. The adopted models address the …
Accurate, Efficient and Reliable Small-Signal Modelling Approaches for GaN HEMTs
This article presents accurate, efficient and reliable small-signal model parameter extraction
approaches applied to Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) …
approaches applied to Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) …
An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications
This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at
elevated temperatures. Modifications to the standard ASM-HEMT were developed to …
elevated temperatures. Modifications to the standard ASM-HEMT were developed to …
Evaluating Nine Machine Learning Algorithms for GaN HEMT Small Signal Behavioral Modeling through K-fold Cross-Validation
N Ahmad, V Nath - Engineering, Technology & Applied Science …, 2024 - etasr.com
This paper presents an investigation into the modeling of Gallium Nitride (GaN) High
Electron Mobility Transistors (HEMTs) using multiple Machine Learning (ML) algorithms …
Electron Mobility Transistors (HEMTs) using multiple Machine Learning (ML) algorithms …
Analysis and modeling of the kink effect in S22 based on support vector machine for GaN HEMTs
Z Zhu, M Geng, J Cai, H Gao - International Journal of …, 2022 - Wiley Online Library
In this work, the kink effect (KE), typically visible in S22, is analyzed and modeled. Two
different modeling techniques: equivalent circuit modeling (ECM) method and machine …
different modeling techniques: equivalent circuit modeling (ECM) method and machine …
Multilayer perceptron–random forest based hybrid machine learning–neural network model for GaN high electron mobility transistor's parameter estimations
This work presents an accurate, scalable, and efficient hybrid machine learning (ML) and
neural network (NN) model based, cross‐platform application to analyze and estimate …
neural network (NN) model based, cross‐platform application to analyze and estimate …
Auto‐encoder based hybrid machine learning model for microwave scaled GaAs pHEMT devices
In this article, a study of performing machine learning (ML) based modeling for
semiconductor devices has been developed using experimental microwave data …
semiconductor devices has been developed using experimental microwave data …
Comprehensive Investigation of ANN Algorithms Implemented in MATLAB, Python and R for Small-Signal Behavioral Modeling of GaN HEMTs
Artificial Neural Network (ANN) is frequently utilized for the development of behavioral
models of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). However …
models of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). However …