Self-assembled monolayer gate doping and their detail deep cryogenic characterization of GaN/Si HEMTs
LCT Cao, YT Chen, BY Chen, JL Chen, CL Chu… - Materials Science in …, 2025 - Elsevier
Abstract Wide bandgap GaN/AlGaN/GaN/SOI high-electron-mobility transistors (GaN/Si
HEMTs) have recently grabbed interest in the semiconductor field as outstanding …
HEMTs) have recently grabbed interest in the semiconductor field as outstanding …
Phosphorus activation in silicon: To deglaze or not to deglaze, that is the question
Extremely efficient phosphorus drive-in into a high resistivity (100) Si substrate is achieved
by an advanced doping technology, providing precise control over the amount of electrically …
by an advanced doping technology, providing precise control over the amount of electrically …