The properties of ferroelectrics at the nanoscale are reviewed. The term nanoscale is here
related to the ferroelectric film thickness (which is by an order of magnitude the size of the …

Fe doped BaTiO 3 ceramics with giant permittivity and low dielectric loss were synthesized
in N 2/H 2 atmosphere started with BaTiO 3 powders and iron powders. XRD analysis …

Electroresistance in ferroelectric tunnel junctions is controlled by changes in the electrostatic
potential profile across the junction upon polarization reversal of the ultrathin ferroelectric …

By engineering strain gradients in dielectrics, the flexoelectric effect can be created, which
yields interesting physical properties via electromechanical coupling. Here, we report …

Integration of highly anisotropic multiferroic thin films on silicon substrates is a critical step
towards low-cost devices, especially high-speed and low-power consumption memories. In …

Recently, flexoelectric effect has attracted considerable attention owing to ubiquitous
existence in all dielectrics, regardless of the symmetry. It promises intriguingly physical …

In this work, we propose a flexible ferroelectric tunnel junction (FTJ) with a nanometer-thick
single-crystalline BaTiO 3 barrier prepared by exfoliating and transferring epitaxial BaTiO 3 …

Plasma spraying technique enables to create layers with thickness in a millimeter range
adhering to various substrates. The supersonic plasma spraying can spray the powders at …

Density-functional calculations are employed to investigate the effect of ferroelectric
polarization of BaTiO 3 on the magnetocrystalline anisotropy of the Fe/BaTiO 3 (001) …

Recently, ion-doped HfO 2 thin films are highly desirable for the next-generation nonvolatile
memories due to excellent compatibility with current complementary metal-oxide …