Contactless RF probe interconnect technology enabling broadband testing to the terahertz range

A Rivera-Lavado, M Ali, D Gallego-Cabo… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
Radiofrequency (RF) probes based on 50-planar transmission lines play a key role in almost
every stage of RF device development, establishing the physical contact between high-end …

Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz

S Fregonese, M Deng, M De Matos… - IEEE Transactions …, 2018 - ieeexplore.ieee.org
Sub-mm circuit design requires accurate on-wafer characterization of passive and active
devices. In industry, characterization of these devices is often performed with off-wafer short …

Non-contact probes for on-wafer characterization of sub-millimeter-wave devices and integrated circuits

C Caglayan, GC Trichopoulos… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
We present a novel non-contact metrology approach for on-wafer characterization of sub-
millimeter-wave devices, components, and integrated circuits. Unlike existing contact probes …

A W-band GSG probe fabricated by metal additive manufacturing

W Wu, B Liu, P He, X Wen, H Yang… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
In this article, we present a new type of waveguide ground-signal-ground (GSG) probe for
millimeter-wave (mmWave) on-wafer measurements. The proposed design integrates a …

Electronics-based free-space terahertz measurement using hemispherical lens antennas

N Chudpooti, N Duangrit, P Akkaraekthalin… - IEEE …, 2019 - ieeexplore.ieee.org
This paper introduces a novel free-space terahertz (THz) characterization setup featuring an
electronic-based technique and miniature additive-manufactured hemispherical lens …

THz characterization and modeling of SiGe HBTs: review

S Fregonese, M Deng, M Cabbia… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
This article presents a state-of-art review of on-wafer S-parameter characterization of THz
silicon transistors for compact modelling purpose. After, a brief review of calibration/de …

Compensating Probe Misplacements in On-Wafer S-Parameters Measurements

R Schmidt, S Clochiatti, E Mutlu… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
As the maximum frequency of electronics is rising, on-wafer measurements play an
important role in modeling of integrated devices. Most of the time, due to the lack of …

Quantifying and correcting tilt-related positioning errors in microcantilever-based microelectromechanical systems probes

S Arscott - Journal of Micromechanics and Microengineering, 2023 - iopscience.iop.org
The impact of tilt-related errors on the positioning of microcantilever-based
microelectromechanical systems (MEMS) on-wafer electrical probes, having multiple contact …

Improved micromachined terahertz on-wafer probe using integrated strain sensor

Q Yu, MF Bauwens, C Zhang… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
This paper introduces an improved method for monitoring and controlling the contact
condition of terahertz on-wafer probes to enhance the measurement repeatability as well as …

A W-band micromachined on-wafer probe with integrated balun for characterization of differential circuits

C Zhang, M Bauwens, NS Barker… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
Differential circuits are commonly used for millimeter-wave monolithic integrated circuits
such as amplifiers and voltage-controlled oscillators. The infrastructure for their …