Contactless RF probe interconnect technology enabling broadband testing to the terahertz range
Radiofrequency (RF) probes based on 50-planar transmission lines play a key role in almost
every stage of RF device development, establishing the physical contact between high-end …
every stage of RF device development, establishing the physical contact between high-end …
Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz
S Fregonese, M Deng, M De Matos… - IEEE Transactions …, 2018 - ieeexplore.ieee.org
Sub-mm circuit design requires accurate on-wafer characterization of passive and active
devices. In industry, characterization of these devices is often performed with off-wafer short …
devices. In industry, characterization of these devices is often performed with off-wafer short …
Non-contact probes for on-wafer characterization of sub-millimeter-wave devices and integrated circuits
C Caglayan, GC Trichopoulos… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
We present a novel non-contact metrology approach for on-wafer characterization of sub-
millimeter-wave devices, components, and integrated circuits. Unlike existing contact probes …
millimeter-wave devices, components, and integrated circuits. Unlike existing contact probes …
A W-band GSG probe fabricated by metal additive manufacturing
W Wu, B Liu, P He, X Wen, H Yang… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
In this article, we present a new type of waveguide ground-signal-ground (GSG) probe for
millimeter-wave (mmWave) on-wafer measurements. The proposed design integrates a …
millimeter-wave (mmWave) on-wafer measurements. The proposed design integrates a …
Electronics-based free-space terahertz measurement using hemispherical lens antennas
This paper introduces a novel free-space terahertz (THz) characterization setup featuring an
electronic-based technique and miniature additive-manufactured hemispherical lens …
electronic-based technique and miniature additive-manufactured hemispherical lens …
THz characterization and modeling of SiGe HBTs: review
S Fregonese, M Deng, M Cabbia… - IEEE Journal of the …, 2020 - ieeexplore.ieee.org
This article presents a state-of-art review of on-wafer S-parameter characterization of THz
silicon transistors for compact modelling purpose. After, a brief review of calibration/de …
silicon transistors for compact modelling purpose. After, a brief review of calibration/de …
Compensating Probe Misplacements in On-Wafer S-Parameters Measurements
R Schmidt, S Clochiatti, E Mutlu… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
As the maximum frequency of electronics is rising, on-wafer measurements play an
important role in modeling of integrated devices. Most of the time, due to the lack of …
important role in modeling of integrated devices. Most of the time, due to the lack of …
Quantifying and correcting tilt-related positioning errors in microcantilever-based microelectromechanical systems probes
S Arscott - Journal of Micromechanics and Microengineering, 2023 - iopscience.iop.org
The impact of tilt-related errors on the positioning of microcantilever-based
microelectromechanical systems (MEMS) on-wafer electrical probes, having multiple contact …
microelectromechanical systems (MEMS) on-wafer electrical probes, having multiple contact …
Improved micromachined terahertz on-wafer probe using integrated strain sensor
This paper introduces an improved method for monitoring and controlling the contact
condition of terahertz on-wafer probes to enhance the measurement repeatability as well as …
condition of terahertz on-wafer probes to enhance the measurement repeatability as well as …
A W-band micromachined on-wafer probe with integrated balun for characterization of differential circuits
Differential circuits are commonly used for millimeter-wave monolithic integrated circuits
such as amplifiers and voltage-controlled oscillators. The infrastructure for their …
such as amplifiers and voltage-controlled oscillators. The infrastructure for their …