(57) ABSTRACT A spin valve magnetoresistance element has an even number of free layer
structures for which half has an antiferromag netic coupling and the other half has a …

A method of sensing a magnetic field including at least one magnetoresistive sensing
element (100) in a circuit (101) includes supplying (702) a first plurality of currents to a …

A magnetoresistance element has a double pinned arrangement with two antiferromagnetic
pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two …

(57) ABSTRACT A magnetoresistance element deposited upon a substrate includes a first
stack portion having opposing first and second surfaces and including a first plurality of …

A magnetoresistance (MR) element includes a first stack portion comprising a first plurality of
layers including a first spacer layer having a first thickness and a first material selected to …

A magnetoresistance element has a pinning arrangement with two antiferromagnetic
pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two …

Presented is a sensor that includes a magnetoresistive (MR) sensing device to sense a
magnetic field and to produce an AC signal voltage proportional to the sensed magnetic …

In general, in one aspect, the invention is directed to a sensor. The sensor includes a
magnetoresistive (MR) sens ing device to sense a magnetic field and to produce an AC …

Presented is a sensor that includes a magnetoresistive (MR) sensing device to sense a
magnetic field and to produce an AC signal voltage proportional to the sensed magnetic …

A magnetoresistance element can have a substrate; a ferromagnetic seed layer consisting of
a binary alloy of NiFe; and a first nonmagnetic spacer layer disposed under and directly …