An attempt is made to study the two dimensional (2D) effective electron mass (EEM) in
quantum wells (Qws), inversion layers (ILs) and NIPI superlattices of Kane type …

We study theoretically the energy spectrum of conduction electrons and the corresponding
density-of-states function (DOS) of III–V, ternary and quaternary semiconductors, whose …

An attempt is made to derive an expression for the effective electron mass along the
direction of a magnetic field in bismuth under magnetic quantization by using the …

An attempt is made to study the effective electron mass in quaternary alloys, taking a In 1− x
Ga x As y P 1− y lattice matched to InP, by using the three-band Kane model under different …

The elastic constant (EC) is a very important mechanical property of the these materials and
its significance is already well known in literature. This first monograph solely deals with the …

A generalized expression of the effective mass of charge carriers in tetragonal
semiconductors (taking n-Cd/sub 3/As/sub 2/as an example) in the presence of arbitrary …

An attempt is made to derive expressions of the effective electron masses in n‐channel
inversion layers on ternary chalcopyrite semiconductors, taking n‐channel inversion layers …

In this paper, an attempt is made to study, the Einstein's photoemission (EP) from III–V, II–VI,
IV–VI, HgTe/CdTe and strained layer quantum well heavily doped superlattices (QWHDSLs) …

The effective electron mass in n-HgTe has been calculated for the difficult case which occurs
from the presence of a quantizing magnetic field. It was found that the effective electron …

We study theoretically the electron energy spectrum and the photoemission from III–V,
ternary and quaternary materials in the presence of light waves, whose unperturbed energy …