Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design
J Liang, A Kobayashi, Y Shimizu, Y Ohno… - Advanced …, 2021 - Wiley Online Library
The direct integration of gallium nitride (GaN) and diamond holds much promise for high‐
power devices. However, it is a big challenge to grow GaN on diamond due to the large …
power devices. However, it is a big challenge to grow GaN on diamond due to the large …
Impact of focused ion beam on structural and compositional analysis of interfaces fabricated by surface activated bonding
Y Ohno, H Yoshida, N Kamiuchi, R Aso… - Japanese journal of …, 2019 - iopscience.iop.org
We have shown that the structural and compositional properties of semiconductor interfaces
fabricated by surface activated bonding (SAB) would be modified during focused ion beam …
fabricated by surface activated bonding (SAB) would be modified during focused ion beam …
Room temperature bonding of Si and Si wafers by using Mo/Au nano-adhesion layers
K Wang, K Ruan, W Hu, S Wu, H Wang - Microelectronic Engineering, 2019 - Elsevier
For realizing the low temperature bonding in the applications such as micro electro
mechanical system (MEMS) packaging and semiconductor integration, Mo/Au nano …
mechanical system (MEMS) packaging and semiconductor integration, Mo/Au nano …
Development and analysis of wafer-bonded four-junction solar cells based on antimonides with 42% efficiency under concentration
The highest solar cell efficiencies today are reached with four-junction devices under
concentrated illumination. The optimal bandgap combination for realistic four-junction cells …
concentrated illumination. The optimal bandgap combination for realistic four-junction cells …
On the depletion behaviour of low-temperature covalently bonded silicon sensor diodes
J Wüthrich, A Rubbia - Journal of Instrumentation, 2022 - iopscience.iop.org
Low temperature covalent direct wafer-wafer bonding allows for the fusion of multiple
semiconductor wafers without any additional material at the bonding interface. In the context …
semiconductor wafers without any additional material at the bonding interface. In the context …
[PDF][PDF] Developments for wafer-bonded four-junction solar cells based on GaSb
The highest solar cell efficiencies today are reached with four-junction devices under
concentrated illumination. One multi-junction cell concept with prospects of reaching highest …
concentrated illumination. One multi-junction cell concept with prospects of reaching highest …
Low-temperature wafer-wafer bonding for particle detection
J Wüthrich - 2023 - research-collection.ethz.ch
Given the omnipresence and economical availability of silicon semiconductor processes, it
is no surprise that direct detection particle pixel detectors are commonly fabricated using …
is no surprise that direct detection particle pixel detectors are commonly fabricated using …