Dislocations in 4H-SiC epilayers for power devices: Identification, formation, and regulation
Y Li, P Hou, S Pan, P Wang, W Cheng, J Wang… - Materials Science in …, 2025 - Elsevier
Abstract 4H-SiC is highly promising for modern electronics, particularly in high-temperature,
high-frequency, and high-power applications. However, the presence of dislocations in 4H …
high-frequency, and high-power applications. However, the presence of dislocations in 4H …
Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography
The influence of seed preparation on crystal defect generation is studied by investigating the
effect of damage from surface scratches not completely removed during polishing on the …
effect of damage from surface scratches not completely removed during polishing on the …
X-Ray Topography Characterization of SiC Crystals Aided by Ray Tracing Simulations
X-ray topography, particularly using synchrotron radiation has been key in characterizing
and analyzing defect behavior in silicon carbide crystals from bulk growth through epilayer …
and analyzing defect behavior in silicon carbide crystals from bulk growth through epilayer …