This article presents a medium voltage half-bridge circuit where 3.3 kV power switches are
built with two 1.7 kV/325 A SiC MOSFETs series-connected inside power modules. Essence …

A 3.3-kV diode-less (D-less) SiC power module adopting a “next high power density dual
package”(named nHPD 2) was developed. Configuring the module with SiC metal-oxide …

This paper presents various issues related to a medium voltage power switch designed with
series-connected transistors of the 1700 V/300 A SiC MOSFET power module. The focus of …

This paper describes highly-efficient two-phase interleaved DC-DC converter designed and
built with 3.3 kV SiC MOSFET modules. The converter is designed to connect 1.5 kV battery …

This paper presents an original method of power loss validation in medium-voltage SiC
MOSFET (metal–oxide–semiconductor field-effect transistor) modules of a three-phase …

Due to the limitations of silicon (Si), there is a paradigm shift in research focusing on wide-
bandgap-based (WBG) materials. SiC power semiconductors exhibit superiority in terms of …

The paper discusses issues related to power converter testing at medium voltage. In
particular, a test circuit composed of a half-bridge with an inductive load controlled with the …

The emergence of wide-bandgap-based (WBG) devices, such as silicon carbide (SiC) and
gallium nitride (GaN), have unveiled unprecedented opportunities, enabling the realization …

Artykuł omawia budowę i badania dwukierunkowego przekształtnika prądu stałego
łączącego obwody średniego (1, 5 kV) i niskiego napięcia (800 V) w systemie szybkiego …

This paper discusses the impact of a new open-loop gate driver for a 3.3 kV/450 A SiC
MOSFET module operating in a three-phase inverter. In general, this driver improves …