Gallium nitride as an electromechanical material
Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular
material after silicon in the semiconductor industry. The prime movers behind this trend are …
material after silicon in the semiconductor industry. The prime movers behind this trend are …
Analysis of 2D transport and performance characteristics for lateral power devices based on AlGaN alloys
ME Coltrin, AG Baca, RJ Kaplar - ECS Journal of Solid State …, 2017 - iopscience.iop.org
Predicted lateral power device performance as a function of alloy composition is
characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility …
characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility …
[HTML][HTML] Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices
ME Coltrin, RJ Kaplar - Journal of Applied Physics, 2017 - pubs.aip.org
Mobility and critical electric field for bulk Al x Ga 1-x N alloys across the full composition
range (0≤ x≤ 1) are analyzed to address the potential application of this material system for …
range (0≤ x≤ 1) are analyzed to address the potential application of this material system for …
[HTML][HTML] A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors
In this work, a hybrid simulation technique is introduced for the electrothermal study of a two-
dimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon …
dimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon …
Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes
D Yan, J Jiao, J Ren, G Yang, X Gu - Journal of Applied Physics, 2013 - pubs.aip.org
The forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes are studied
by temperature dependent current-voltage (TIV) measurements from 298 to 473 K. The zero …
by temperature dependent current-voltage (TIV) measurements from 298 to 473 K. The zero …
Temperature-dependent dynamic degradation of carbon-doped GaN HEMTs
Temperature-dependent dynamic degradation was investigated for C-doped GaN high
electron mobility transistor (HEMT) from 300 to 20 K. Pulsed IV measurements with various …
electron mobility transistor (HEMT) from 300 to 20 K. Pulsed IV measurements with various …
Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures
In this paper, we present a study of the effect of temperature on the two-dimensional electron
mobility, Hall scattering factor, and sheet conductivity, using a fully numerical calculation in …
mobility, Hall scattering factor, and sheet conductivity, using a fully numerical calculation in …
[HTML][HTML] Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments
This Letter reports the device and material investigations of enhancement-mode p-GaN-gate
AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other …
AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other …
A comprehensive model and numerical analysis of electron mobility in GaN-based high electron mobility transistors
GaN-based heterostructures have been used in high-power radio frequency applications for
a number of years due to the wide bandgap of GaN and high values of spontaneous and …
a number of years due to the wide bandgap of GaN and high values of spontaneous and …
Theoretical prediction of mobility improvement in GaN-based HEMTs at high carrier densities
In this article, we use a semiclassical low-field mobility modeling framework, which includes
all relevant scattering mechanisms, to examine the dependence of electron mobility on 2-D …
all relevant scattering mechanisms, to examine the dependence of electron mobility on 2-D …