Reconfigurable field effect transistors: A technology enablers perspective
With classical scaling of CMOS transistors according to Dennard's scaling rules running out
of steam, new possibilities to increase the functionality of an integrated circuit at a given …
of steam, new possibilities to increase the functionality of an integrated circuit at a given …
Emerging reconfigurable electronic devices based on two‐dimensional materials: A review
As the dimensions of the transistor, the key element of silicon technology, are approaching
their physical limits, developing semiconductor technology with novel concepts and …
their physical limits, developing semiconductor technology with novel concepts and …
Logic-in-memory based on an atomically thin semiconductor
The growing importance of applications based on machine learning is driving the need to
develop dedicated, energy-efficient electronic hardware. Compared with von Neumann …
develop dedicated, energy-efficient electronic hardware. Compared with von Neumann …
Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices
The co-integration of logic switches and neuromorphic functions could be used to create
new computing architectures with low power consumption and novel functionalities. Two …
new computing architectures with low power consumption and novel functionalities. Two …
[HTML][HTML] All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
Abstract 3D monolithic integration of logic and memory has been the most sought after
solution to surpass the Von Neumann bottleneck, for which a low-temperature processed …
solution to surpass the Von Neumann bottleneck, for which a low-temperature processed …
[HTML][HTML] The ambipolar transport behavior of WSe2 transistors and its analogue circuits
Tungsten diselenide (WSe2) has many excellent properties and provides superb potential in
applications of valley-based electronics, spin-electronics, and optoelectronics. To facilitate …
applications of valley-based electronics, spin-electronics, and optoelectronics. To facilitate …
[HTML][HTML] Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor
Reconfigurable field effect transistors are an emerging class of electronic devices, which
exploit a structure with multiple independent gates to selectively adjust the charge carrier …
exploit a structure with multiple independent gates to selectively adjust the charge carrier …
High-speed transition-metal dichalcogenides based schottky photodiodes for visible and infrared light communication
Y Zhang, W Shen, S Wu, W Tang, Y Shu, K Ma… - ACS …, 2022 - ACS Publications
Due to their atomically ultrathin thickness, the development of high-performance transition-
metal dichalcogenides (TMDCs) based photodetectors demands device designs distinct …
metal dichalcogenides (TMDCs) based photodetectors demands device designs distinct …
Doping-free complementary logic gates enabled by two-dimensional polarity-controllable transistors
Atomically thin two-dimensional (2D) materials belonging to transition metal
dichalcogenides, due to their physical and electrical properties, are an exceptional vector for …
dichalcogenides, due to their physical and electrical properties, are an exceptional vector for …
2D materials: roadmap to CMOS integration
C Huyghebaert, T Schram, Q Smets… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
To keep Moore's law alive, 2D materials are considered as a replacement for Si in advanced
nodes due to their atomic thickness, which offers superior performance at nm dimensions. In …
nodes due to their atomic thickness, which offers superior performance at nm dimensions. In …