Reconfigurable field effect transistors: A technology enablers perspective

T Mikolajick, G Galderisi, S Rai, M Simon, R Böckle… - Solid-State …, 2022 - Elsevier
With classical scaling of CMOS transistors according to Dennard's scaling rules running out
of steam, new possibilities to increase the functionality of an integrated circuit at a given …

Emerging reconfigurable electronic devices based on two‐dimensional materials: A review

W Fei, J Trommer, MC Lemme, T Mikolajick… - InfoMat, 2022 - Wiley Online Library
As the dimensions of the transistor, the key element of silicon technology, are approaching
their physical limits, developing semiconductor technology with novel concepts and …

Logic-in-memory based on an atomically thin semiconductor

G Migliato Marega, Y Zhao, A Avsar, Z Wang… - Nature, 2020 - nature.com
The growing importance of applications based on machine learning is driving the need to
develop dedicated, energy-efficient electronic hardware. Compared with von Neumann …

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

S Kamaei, X Liu, A Saeidi, Y Wei, C Gastaldi… - Nature …, 2023 - nature.com
The co-integration of logic switches and neuromorphic functions could be used to create
new computing architectures with low power consumption and novel functionalities. Two …

[HTML][HTML] All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

M Sivan, Y Li, H Veluri, Y Zhao, B Tang, X Wang… - Nature …, 2019 - nature.com
Abstract 3D monolithic integration of logic and memory has been the most sought after
solution to surpass the Von Neumann bottleneck, for which a low-temperature processed …

[HTML][HTML] The ambipolar transport behavior of WSe2 transistors and its analogue circuits

Z Wang, Q Li, Y Chen, B Cui, Y Li, F Besenbacher… - NPG Asia …, 2018 - nature.com
Tungsten diselenide (WSe2) has many excellent properties and provides superb potential in
applications of valley-based electronics, spin-electronics, and optoelectronics. To facilitate …

[HTML][HTML] Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor

M Simon, H Mulaosmanovic, V Sessi… - Nature …, 2022 - nature.com
Reconfigurable field effect transistors are an emerging class of electronic devices, which
exploit a structure with multiple independent gates to selectively adjust the charge carrier …

High-speed transition-metal dichalcogenides based schottky photodiodes for visible and infrared light communication

Y Zhang, W Shen, S Wu, W Tang, Y Shu, K Ma… - ACS …, 2022 - ACS Publications
Due to their atomically ultrathin thickness, the development of high-performance transition-
metal dichalcogenides (TMDCs) based photodetectors demands device designs distinct …

Doping-free complementary logic gates enabled by two-dimensional polarity-controllable transistors

GV Resta, Y Balaji, D Lin, IP Radu, F Catthoor… - ACS …, 2018 - ACS Publications
Atomically thin two-dimensional (2D) materials belonging to transition metal
dichalcogenides, due to their physical and electrical properties, are an exceptional vector for …

2D materials: roadmap to CMOS integration

C Huyghebaert, T Schram, Q Smets… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
To keep Moore's law alive, 2D materials are considered as a replacement for Si in advanced
nodes due to their atomic thickness, which offers superior performance at nm dimensions. In …