A review of memristor: material and structure design, device performance, applications and prospects

Y Xiao, B Jiang, Z Zhang, S Ke, Y Jin… - … and Technology of …, 2023 - Taylor & Francis
With the booming growth of artificial intelligence (AI), the traditional von Neumann
computing architecture based on complementary metal oxide semiconductor devices are …

A full spectrum of computing-in-memory technologies

Z Sun, S Kvatinsky, X Si, A Mehonic, Y Cai… - Nature Electronics, 2023 - nature.com
Computing in memory (CIM) could be used to overcome the von Neumann bottleneck and to
provide sustainable improvements in computing throughput and energy efficiency …

Tantalum pentoxide (Ta2O5 and Ta2O5-x)-based memristor for photonic in-memory computing application

W Wang, F Yin, H Niu, Y Li, ES Kim, NY Kim - Nano Energy, 2023 - Elsevier
Photonic in-memory computing exhibits promising potential to address the inherent
limitations of traditional von Neumann architecture. In this study, we demonstrate a tantalum …

Looking beyond 0 and 1: principles and technology of multi‐valued logic devices

M Andreev, S Seo, KS Jung, JH Park - Advanced Materials, 2022 - Wiley Online Library
Ever since the invention of solid‐state transistors, binary devices have dominated the
electronics industry. Although the binary technology links the natural property of devices to …

Artificial sensory system based on memristive devices

JY Kwon, JE Kim, JS Kim, SY Chun, K Soh… - …, 2024 - Wiley Online Library
In the biological nervous system, the integration and cooperation of parallel system of
receptors, neurons, and synapses allow efficient detection and processing of intricate and …

Low-temperature Ta-doped TiOx electron-selective contacts for high-performance silicon solar cells

L Zhang, J Qiu, H Cheng, Y Zhang, S Zhong… - Solar Energy Materials …, 2024 - Elsevier
Carrier-selective contacts have been widely used to reduce the recombination losses of the
minority carriers and boost the transport of the majority carriers at the contact regions for …

Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors

J Son, Y Shin, K Cho, S Kim - Advanced Electronic Materials, 2023 - Wiley Online Library
In this study, the logic‐in‐memory operations are demonstrated of ternary NAND and NOR
logic gates consisting of double‐gated feedback field‐effect transistors. The component …

Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO2/RuO2 Memristor

DH Shin, H Park, N Ghenzi, YR Kim… - … Applied Materials & …, 2024 - ACS Publications
Higher functionality should be achieved within the device-level switching characteristics to
secure the operational possibility of mixed-signal data processing within a memristive …

BC-MVLiM: A binary-compatible multi-valued logic-in-memory based on memristive crossbars

Y Sun, Z Li, W Liu, W He, Q Wang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Logic-in-memory with memristive crossbars is an attractive approach for realizing beyond
von Neumann architectures. Multi-valued logic (MVL) containing more than two logic levels …

Operant conditioning reflex implementation in a transparent Ta2O5–3x/Ta2O5− x homo-structured optoelectronic memristor for neuromorphic computing application

W Wang, NY Kim, D Lee, F Yin, H Niu, E Ganbold… - Nano Energy, 2024 - Elsevier
The emulation of neuromorphic computations like the human brain exhibits an intriguing
potential in the development of next-generation computing architectures and artificial …