Nanowire electronics: from nanoscale to macroscale
Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …
Energy-efficient transistors: suppressing the subthreshold swing below the physical limit
With the miniaturization of silicon-based electronic components, power consumption is
becoming a fundamental issue for micro–nano electronic circuits. The main reason for this is …
becoming a fundamental issue for micro–nano electronic circuits. The main reason for this is …
Low-voltage tunnel transistors for beyond CMOS logic
AC Seabaugh, Q Zhang - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
Steep subthreshold swing transistors based on interband tunneling are examined toward
extending the performance of electronics systems. In particular, this review introduces and …
extending the performance of electronics systems. In particular, this review introduces and …
[图书][B] Computational Electronics: semiclassical and quantum device modeling and simulation
Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …
[图书][B] Fundamentals of tunnel field-effect transistors
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering
An atomistic full-band quantum transport simulator has been developed to study three-
dimensional Si nanowire field-effect transistors in the presence of electron-phonon …
dimensional Si nanowire field-effect transistors in the presence of electron-phonon …
Performance enhancement of novel InAs/Si hetero double-gate tunnel FET using Gaussian doping
In this paper, for the first time, an InAs/Si heterojunction double-gate tunnel FET (H-DGTFET)
has been analyzed for low-power high-frequency applications. For this purpose, the …
has been analyzed for low-power high-frequency applications. For this purpose, the …
Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling
Nanowire band-to-band tunneling field-effect transistors (TFETs) are simulated using the
Wentzel–Kramers–Brillouin (WKB) approximation and an atomistic, full-band quantum …
Wentzel–Kramers–Brillouin (WKB) approximation and an atomistic, full-band quantum …
30-nm tunnel FET with improved performance and reduced ambipolar current
C Anghel, A Gupta, A Amara… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
This paper presents the optimization of double-gate silicon (Si) tunnel field-effect transistors
(TFETs). It shows that, for the heterodielectric structure, the I ON current is boosted by …
(TFETs). It shows that, for the heterodielectric structure, the I ON current is boosted by …
A review of selected topics in physics based modeling for tunnel field-effect transistors
The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years,
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …