The minimization of the subthreshold swing (SS) in transistors is essential for low‐voltage
operation and lower power consumption, both critical for mobile devices and internet of …

There has been a growing interest in electronic and optoelectronic devices based on
heterostructures between atomically thin 2D and 3D semiconductor materials. This paper …

High-temperature performance of diamond junction field-effect transistors (JFETs) with
lateral pn junctions is demonstrated. Diamond JFETs fabricated by n-type selective growth …

Abstract Two-dimensional (2D) metal chalcogenides (MCs) showed great potential in
meeting the requirements of high-performance (opto) electronic devices. In addition to the …

High-performance and low operating voltage are becoming increasingly significant device
parameters to meet the needs of future integrated circuit (IC) processors and ensure their …

Two‐dimensional non‐layered tellurene (Te) can serve as a promising candidate in
transistor applications because of its high carrier mobility and air stability. However, it is still …

The GAA FET has emerged as a promising device due to its excellent control over short-
channel effects and improved electrostatic control. This manuscript presents the analytical …

In this paper, we report the 2-D drain current model for asymmetric dual material (DM)
junctionless double gate transistor. On the basis of channel potential, transconductance and …

This paper demonstrates the influence of nonuniform doping on the electrostatics of
symmetric double-gate junctionless transistor using empirical modeling scheme. To present …

In this paper, a dielectric-pocket double-gate MOSFET is described for low-voltage low-
power applications. A complete drain current model has been developed including the …