Nanometre-thin indium tin oxide for advanced high-performance electronics
Although indium tin oxide (ITO) is widely used in optoelectronics due to its high optical
transmittance and electrical conductivity, its degenerate doping limits exploitation as a …
transmittance and electrical conductivity, its degenerate doping limits exploitation as a …
Roadmap to gigahertz organic transistors
U Zschieschang, JW Borchert, M Giorgio… - Advanced Functional …, 2020 - Wiley Online Library
Despite the large body of research conducted on organic transistors, the transit frequency of
organic field‐effect transistors has seen virtually no improvement for a decade and remains …
organic field‐effect transistors has seen virtually no improvement for a decade and remains …
Growth of Ta2SnO6 Films, a Candidate Wide-Band-Gap p-Type Oxide
In an effort to discover a high-mobility p-type oxide, recent computational studies have
focused on Sn2+-based ternary oxides. Ta2SnO6 has been suggested as a potentially …
focused on Sn2+-based ternary oxides. Ta2SnO6 has been suggested as a potentially …
A phased array based on large-area electronics that operates at gigahertz frequency
Large-aperture electromagnetic phased arrays can provide directionally controlled radiation
signals for use in applications such as communications, imaging and power delivery …
signals for use in applications such as communications, imaging and power delivery …
Radio frequency coplanar ZnO Schottky nanodiodes processed from solution on plastic substrates
James Semple, Stephan Rossbauer, Claire H. Burgess, Kui Zhao, Lethy Krishnan
Jagadamma, Aram Amassian, Martyn A. McLachlan, and Thomas D. Anthopoulos …
Jagadamma, Aram Amassian, Martyn A. McLachlan, and Thomas D. Anthopoulos …
Amorphous-InGaZnO thin-film transistors operating beyond 1 GHz achieved by optimizing the channel and gate dimensions
Y Wang, J Yang, H Wang, J Zhang, H Li… - … on Electron Devices, 2018 - ieeexplore.ieee.org
Amorphous indium–gallium–zinc oxide (a-InGaZnO or a-IGZO) has already started replacing
amorphous silicon in backplane driver transistors for large-area displays. However, hardly …
amorphous silicon in backplane driver transistors for large-area displays. However, hardly …
Fast all-transparent integrated circuits based on indium gallium zinc oxide thin-film transistors
A Suresh, P Wellenius, V Baliga, H Luo… - IEEE Electron …, 2010 - ieeexplore.ieee.org
We describe the fabrication and characterization of visible transparent small-scale indium
gallium zinc oxide (IGZO) integrated circuits. The IGZO channel and indium tin oxide (ITO) …
gallium zinc oxide (IGZO) integrated circuits. The IGZO channel and indium tin oxide (ITO) …
Fast flexible plastic substrate ZnO circuits
D Zhao, DA Mourey, TN Jackson - IEEE Electron Device …, 2010 - ieeexplore.ieee.org
We report thin-film transistors (TFTs) and circuits fabricated on flexible plastic substrates
using ZnO thin films deposited by plasma-enhanced atomic layer deposition at 200° C …
using ZnO thin films deposited by plasma-enhanced atomic layer deposition at 200° C …
[HTML][HTML] Fully transparent field-effect transistor with high drain current and on-off ratio
We report a fully transparent thin-film transistor utilizing a La-doped BaSnO 3 channel layer
that provides a drain current of 0.468 mA/μm and an on-off ratio of 1.5× 10 8. The La-doped …
that provides a drain current of 0.468 mA/μm and an on-off ratio of 1.5× 10 8. The La-doped …
Zinc oxide thin film transistors with Schottky source barriers
AM Ma, M Gupta, FR Chowdhury, M Shen, K Bothe… - Solid-State …, 2012 - Elsevier
Schottky barrier field effect transistors (SB FETs) with Schottky source injection barrier
contacts are fabricated using zinc oxide (ZnO) thin films deposited by pulsed laser …
contacts are fabricated using zinc oxide (ZnO) thin films deposited by pulsed laser …