A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …

JA Spencer, AL Mock, AG Jacobs, M Schubert… - Applied Physics …, 2022 - pubs.aip.org
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications

X Hou, Y Zou, M Ding, Y Qin, Z Zhang… - Journal of Physics D …, 2020 - iopscience.iop.org
Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …

Monolithically integrating III‐nitride quantum structure for full‐spectrum white LED via bandgap engineering heteroepitaxial growth

B Fan, X Zhao, J Zhang, Y Sun, H Yang… - Laser & Photonics …, 2023 - Wiley Online Library
Great progress made by heteroepitaxial growth technology encourages rapid development
of III‐nitride heteroepitaxial structures and their applications in extensive fields. Particularly …

Materials issues and devices of α-and β-Ga2O3

E Ahmadi, Y Oshima - Journal of Applied Physics, 2019 - pubs.aip.org
Ga 2 O 3 is an ultrawide bandgap semiconductor with a bandgap energy of 4.5–5.3 eV
(depending on its crystal structure), which is much greater than those of conventional wide …

Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

Y Qin, L Li, X Zhao, GS Tompa, H Dong, G Jian… - Acs …, 2020 - ACS Publications
In recent years, Ga2O3 solar-blind photodetectors (SBPDs) have received great attention for
their potential applications in solar-blind imaging, deep space exploration, confidential …

A review of Ga2O3 deep-ultraviolet metal–semiconductor Schottky photodiodes

Z Liu, W Tang - Journal of Physics D: Applied Physics, 2023 - iopscience.iop.org
Deep-ultraviolet (DUV) photodetectors are fundamental building blocks in many solid-state
DUV optoelectronics, and their success relies on continuous innovations in semiconductor …

Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review

BR Tak, S Kumar, AK Kapoor, D Wang… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …

Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions

M Bosi, P Mazzolini, L Seravalli… - Journal of Materials …, 2020 - pubs.rsc.org
Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic
applications (eg, power electronics and solar blind UV photodetectors). Besides its most …

A strategic review on gallium oxide based power electronics: Recent progress and future prospects

D Kaur, A Ghosh, M Kumar - Materials Today Communications, 2022 - Elsevier
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …

[HTML][HTML] Vacuum-ultraviolet photon detections

W Zheng, L Jia, F Huang - Iscience, 2020 - cell.com
Vacuum-ultraviolet (VUV) photon detection technology is an effective means for the
exploration in the field of space science (monitoring the formation and evolution of solar …