In this work, we demonstrate modulation-doped β-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 double
heterostructure field effect transistors. The maximum sheet carrier density for a two …

Organic–inorganic halide hybrid perovskite materials are promising materials for X‐ray and
photon detection due to their superior optoelectronic properties. Single‐crystal (SGC) …

In order to characterize the electron transport properties of the two-dimensional electron gas
(2DEG) in AlGaN/GaN modulation-doped field-effect transistors, channel magnetoresistance …

We carried out the temperature (22–350 K) and magnetic field (0.05 and 1.4 T) dependent
Hall mobility and carrier density measurements on Al 0.22 Ga 0.78 N/GaN heterostructures …

As a potential system for realizing strong spin-orbit coupling (SOC), 5 dA Ta O 3 perovskite
oxides have recently received extensive attention. This study presents SrTaO 3/KTa O 3 5 d …

In this paper, we present a study of the effect of temperature on the two-dimensional electron
mobility, Hall scattering factor, and sheet conductivity, using a fully numerical calculation in …

This textbook is intended for students and engineers who are engaged in the development
of power electronic equipment as well as power amplifiers for radio frequency applications …

The results on growth and magnetotransport characterization of Al Ga N∕ Ga N
heterostructures obtained by plasma assisted molecular beam epitaxy on dislocation-free …

Hall effect measurements on undoped Al 0.25 Ga 0.75 N/GaN heterostructures grown by a
metalorganic chemical vapour deposition (MOCVD) technique have been carried out as a …

A powerful method for mobility spectrum analysis is presented, based on Bryan's maximum
entropy algorithm. The Bayesian analysis central to Bryan's algorithm ensures that we avoid …