Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects
A large number of factors such as the increasingly stringent pollutant emission policies,
fossil fuel scarcity and their price volatility have increased the interest towards the partial or …
fossil fuel scarcity and their price volatility have increased the interest towards the partial or …
The role of power device technology in the electric vehicle powertrain
In the automotive industry, the design and implementation of power converters and
especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …
especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …
A new complete condition monitoring method for SiC power MOSFETs
This article proposes a new complete condition monitoring method which can independently
monitor both the threshold voltage drift and the packaging degradation accurately by …
monitor both the threshold voltage drift and the packaging degradation accurately by …
Temperature-independent gate-oxide degradation monitoring of SiC MOSFETs based on junction capacitances
Gate-oxide degradation has been one of the major reliability challenges of SiC MOSFETs
and should be monitored carefully to avoid unexpected power converter failures. Various …
and should be monitored carefully to avoid unexpected power converter failures. Various …
A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets
JAO Gonzalez, O Alatise - IEEE Transactions on Power …, 2018 - ieeexplore.ieee.org
Threshold voltage (VTH) shift due to bias temperature instability (BTI) is a well-known
problem in SiC mosfets that occurs due to oxide traps in the SiC/SiO2 gate interface. The …
problem in SiC mosfets that occurs due to oxide traps in the SiC/SiO2 gate interface. The …
Third quadrant conduction loss of 1.2–10 kV SiC MOSFETs: Impact of gate bias control
The third quadrant (3rd-quad) conduction of power MOSFETs involves competing current
sharing between the metal-oxide-semiconductor (MOS) channel and the body diode …
sharing between the metal-oxide-semiconductor (MOS) channel and the body diode …
Datasheet-driven compact model of silicon carbide power MOSFET including third-quadrant behavior
This article presents a simulation model of silicon carbide (SiC) power MOSFET that
accurately predicts both the static and dynamic third-quadrant behavior without …
accurately predicts both the static and dynamic third-quadrant behavior without …
Demonstration of a 10 kV SiC MOSFET based medium voltage power stack
This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage
power conversion with a simple two-level voltage source converter topology. The design of …
power conversion with a simple two-level voltage source converter topology. The design of …
Influence of the inverter dead-time on the reverse recovery characteristics of 3.3-kv sic mosfets and jbsfets
A Kumar, S Bhattacharya… - 2022 IEEE Energy …, 2022 - ieeexplore.ieee.org
The switching behavior of the high voltage (HV) SiC MOSFETs is superior to that of HV
silicon IGBTs. In medium voltage high switching frequency power conversion applications …
silicon IGBTs. In medium voltage high switching frequency power conversion applications …
Investigation into the third quadrant characteristics of silicon carbide MOSFET
Owing to the superior performances, silicon carbide (SiC) metal oxide semiconductor field
effect transistors (mosfet s) attract a lot of attention. To increase the power density, it is …
effect transistors (mosfet s) attract a lot of attention. To increase the power density, it is …