Nitride spacer aided 0.15 μm AlGaN/GaN HEMT fabrication with optimized gate patterning process
B Lv, L Zhang, J Mo - Applied Physics Letters, 2024 - pubs.aip.org
I-line stepper is widely used in large scale device manufacturing with limited achievable
critical dimension by itself. With the aid of the spacer sidewall, the critical dimension can be …
critical dimension by itself. With the aid of the spacer sidewall, the critical dimension can be …
A width-scalable spice model of gan-hemts for X-band RF applications
This work presents a model for GaN HEMT devices using a broad width-scaling approach,
considering the geometrical changes in threshold voltage, mobility and drain-induced …
considering the geometrical changes in threshold voltage, mobility and drain-induced …
Scalable GaN-HEMT Model for X-band RF Applications
The cutoff voltage (VOFF) of a HEMT is an important parameter that affects its performance,
and it can indeed change with self-heating. In this work, we study the effect of geometrical …
and it can indeed change with self-heating. In this work, we study the effect of geometrical …