InGaN: An overview of the growth kinetics, physical properties and emission mechanisms
This article reviews the fundamental properties of InGaN materials. The growth kinetics
associated with the growth parameters, such as growth temperatures, V/III ratios, and growth …
associated with the growth parameters, such as growth temperatures, V/III ratios, and growth …
Structure and electronic properties of InN and In-rich group III-nitride alloys
The experimental study of InN and In-rich InGaN by a number of structural, optical and
electrical methods is reviewed. Recent advances in thin film growth have produced single …
electrical methods is reviewed. Recent advances in thin film growth have produced single …
Photoluminescence and intrinsic properties of MBE-grown InN nanowires
The influence of the growth parameters on the photoluminescence (PL) spectra has been
investigated for samples with columnar morphology, either with InN columns on original …
investigated for samples with columnar morphology, either with InN columns on original …
Band-gap measurements of direct and indirect semiconductors using monochromated electrons
With the development of monochromators for transmission electron microscopes, valence
electron-energy-loss spectroscopy (VEELS) has become a powerful technique to study the …
electron-energy-loss spectroscopy (VEELS) has become a powerful technique to study the …
The impact of surface and retardation losses on valence electron energy-loss spectroscopy
R Erni, ND Browning - Ultramicroscopy, 2008 - Elsevier
The inelastic scattering of fast electrons transmitting thin foils of silicon (Si), silicon nitride
(Si3N4), gallium arsenide (GaAs), gallium nitride (GaN) and cadmium selenide (CdSe) was …
(Si3N4), gallium arsenide (GaAs), gallium nitride (GaN) and cadmium selenide (CdSe) was …
Structural, optical and morphological properties of hybrid heterostructures on the basis of GaN grown on compliant substrate por-Si (111)
PV Seredin, AS Lenshin, AM Mizerov, H Leiste… - Applied Surface …, 2019 - Elsevier
Structural, optical and morphological properties of hybrid heterostructures on the basis of
GaN grown on compliant substrate por-Si(111) - ScienceDirect Skip to main contentSkip to …
GaN grown on compliant substrate por-Si(111) - ScienceDirect Skip to main contentSkip to …
Thickness-dependent band gap of α-In2Se3: from electron energy loss spectroscopy to density functional theory calculations
Abstract α-In 2 Se 3 has attracted increasing attention in recent years due to its excellent
electrical and optical properties. Especially, attention has been paid to its peculiar …
electrical and optical properties. Especially, attention has been paid to its peculiar …
Quantification of the size-dependent energy gap of individual CdSe quantum dots by valence electron energy-loss spectroscopy
R Erni, ND Browning - Ultramicroscopy, 2007 - Elsevier
Valence electron energy-loss spectroscopy (VEELS) performed in a monochromated
scanning transmission electron microscope was used to measure the energy gaps of …
scanning transmission electron microscope was used to measure the energy gaps of …
2 Electron Bandstructure Parameters Igor Vurgaftman and Jerry R. Meyer
I Vurgaftman - Nitride semiconductor devices: Principles and …, 2007 - books.google.com
In response to the current intensive scientific and commercial interest in nitride
semiconductors, several recent works have reviewed their material and physical properties …
semiconductors, several recent works have reviewed their material and physical properties …
Influence of por-Si sublayer on the features of heteroepitaxial growth and physical properties of InxGa1-xN/Si (111) heterostructures with nanocolumn morphology of …
PV Seredin, DL Goloshchapov, АS Lenshin… - Physica E: Low …, 2018 - Elsevier
Integrated heterostructures with a nanocolumn morphology of the film In x Ga 1-x N were
grown using the method of molecular beam epitaxy, with plasm activation of nitrogen on a …
grown using the method of molecular beam epitaxy, with plasm activation of nitrogen on a …