In the present study, the dielectric function of freestanding GaN nanomembranes was
described using valence electron energy loss spectroscopy coupled to a monochromated …

Semiconductor nano-membranes provide a new way to develop optical devices with better
performance. Herein, we report a fabrication method of GaN-based LED membranes with a …

Aluminum nitride (AlN) thin films deposited by reactive radio frequency magnetron sputtering
in an Ar/N 2 discharge on Si (001) substrates were studied with respect to structure, stress …

In this paper, selected mechanical properties of a circular AlGaN/GaN diaphragm with an
integrated circular high electron mobility transistor (HEMT) intended for pressure sensing …

We report on fabrication of suspended∼ 15 nm thick GaN membranes nanoperforated in an
ordered fashion using direct writing of negative charges by focused ion beam and …

The lack of high‐quality gallium nitride (GaN) wafers may be a non‐negligible bottleneck
restricting the development of GaN‐based devices. Although various processing methods …

We present a review of technological methods developed in recent years for the purpose of
gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In …

We present technological issues in the deposition of diamond films on the GaN membranes.
Many wrinkles and the thicker diamond layer were observed at the membrane centre and …

It is commonly regarded that Richard P. Feynman originated the field of microand nano-
electro-mechanical systems (MEMS and NEMS), and more generally the field of …

The morphological analysis is targeted towards a better understanding of the reliability of
GaN membranes obtained by micromachining of GaN/Si. These membranes are used as …