Precise determination of crystal lattice parameters
VV Lider - Physics-Uspekhi, 2020 - iopscience.iop.org
Precision X-ray methods for absolute and relative determination of crystal lattice parameters
(interplanar distances) are described and compared, including the X-ray divergent-beam …
(interplanar distances) are described and compared, including the X-ray divergent-beam …
Прецизионное определение параметров кристаллической решётки
ВВ Лидер - Успехи физических наук, 2020 - elibrary.ru
Описываются и сравниваются прецизионные рентгеновские методы абсолютного и
относительного определения параметров кристаллической решётки (межплоскостных …
относительного определения параметров кристаллической решётки (межплоскостных …
[PDF][PDF] X-ray Diffraction Topography-Investigation of Single Crystals Grown by the Czochralski Method
M Lefeld-Sosnowska, A Malinowska - Acta Physica Polonica A, 2013 - bibliotekanauki.pl
X-ray diffraction topography is one of basic diagnostics tools serving for visualisation of
single crystal lattice defects. Defects of various kinds can be observed. The present study is …
single crystal lattice defects. Defects of various kinds can be observed. The present study is …
An Investigation on the Effect of Nanostructuring on Mechanical and Ultrasonic Properties of Si/Si x ge1− x Superlattice Nanowires
In this paper, we present theoretical investigations on mechanical and ultrasonic properties
of Si/Si x Ge1− x nanowires. Anharmonic elastic constants of the material are calculated at …
of Si/Si x Ge1− x nanowires. Anharmonic elastic constants of the material are calculated at …
Wpływ defektów punktowych na zmianę parametrów sieciowych monokryształów krzemu i wybranych tlenków metali stosowanych w optoelektronice
J Kucytowski - 2009 - opus.us.edu.pl
Kontrola obecności i sposoby regulacji różnych mikrodefektów, które wywołują lokalne
zaburzenie w periodyczności sieci, jest niezwykle trudna zarówno z naukowego punktu …
zaburzenie w periodyczności sieci, jest niezwykle trudna zarówno z naukowego punktu …
Studies of growth bands in Si: Ge crystals
K Wieteska, W Wierzchowski, W Graeff… - Materials Science and …, 2002 - Elsevier
Si: Ge crystals with approximately 3% of germanium were studied with various topographic
methods using both conventional and synchrotron sources of X-rays. The present …
methods using both conventional and synchrotron sources of X-rays. The present …