The transport of fluid in and around nanometer-sized objects with at least one characteristic
dimension below 100 nm enables the occurrence of phenomena that are impossible at …

The trend predicted by Moore's law sets forth strict requirements on the electronic properties
of materials that cannot always be satisfied by conventional semiconductors. Thus, the last …

The development of semiconductor nanowires has recently been the focus of extensive
research as these structures may play an important role in the next generation of nanoscale …

We report on the controllable doping of germanium nanowires (GeNWs) via selective
molecule adsorption on the surface dangling bond. The GeNWs investigated are fabricated …

A novel method to fabricate cobalt silicide nanowire contacts to silicon nanowires is
described. Nanoporous anodized alumina membranes were used to define the wires' …

In the method, semiconductor substrates are etched to provide nanowires, said substrates
comprising a first layer of a first material and a second layer of a second material with a …

Hybrid structures are formed from materials of different families. Traditionally, group IV and III–
V semiconductors have not been integrated together in the same device or application. In …

We report the characterization of a single-electron transistor based on bended wires
fabricated on modulation-doped SiGe two-dimensional electron gas. Electrical …

We fabricated strongly confined Schottky-gated quantum point contacts by etching Si∕ Si
Ge heterostructures and observed intriguing conductance quantization in units of …

The controlled depletion of electrons in semiconductors is the basis for numerous devices.
Reactive-ion etching provides an effective technique for fabricating both classical and …