Low temperature (< 700° C) SiO2 and Si-rich SiO2 films: Short review

C Falcony, D Estrada-Wiese, J De Anda… - Journal of Vacuum …, 2023 - pubs.aip.org
SiO2 layers deposited at temperatures (lower than 700 C) have attracted a great deal of
attention for a large variety of applications, since they can be used for dielectric isolation, a …

[HTML][HTML] Electrical and electroluminescent characterization of nanometric multilayers of SiOX/SiOY obtained by LPCVD including non-normal emission

J Alarcón-Salazar, IE Zaldívar-Huerta… - Journal of Applied …, 2016 - pubs.aip.org
This work describes the analysis and fabrication by Low Pressure Chemical Vapor
Deposition of two light-emitting capacitors (LECs) constituted by nanometric multilayers of …

Spectroscopic and microscopic correlation of SRO-HFCVD films on quartz and silicon

HP Martínez Hernández, JA Luna López… - Crystals, 2020 - mdpi.com
This work is focused on making a correlation between results obtained by using
spectroscopy and microscopy techniques from single and twofold-layer Silicon-Rich Oxide …

Silicon-rich oxide obtained by low-pressure chemical vapor deposition to develop silicon light sources

J Alarcón-Salazar, R López-Estopier… - … and Applications in …, 2016 - books.google.com
Off stoichiometric silicon oxide, also known as silicon-rich oxide (SRO), is a lightemitting
material that is compatible with silicon technology; therefore, it is a good candidate to be …

[HTML][HTML] Comparison of light emitting capacitors with textured and polished silicon substrates towards the understanding of the emission mechanisms

J Alarcón-Salazar, MA Vásquez-Agustín… - Journal of …, 2018 - Elsevier
We experimentally compare the optical and electrical characteristics of Light Emitting
Capacitors (LECs) using textured and polished silicon surface. The goal of this work is …

Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices

DV Shuleiko, SV Zabotnov, DM Zhigunov, AA Zelenina… - Semiconductors, 2017 - Springer
The photoluminescence properties of silicon nitride and oxide superlattices fabricated by
plasmaenhanced chemical vapor deposition are studied. In the structures annealed at a …

[HTML][HTML] Enhancing emission and conduction of light emitting capacitors by multilayered structures of silicon rich oxide

J Alarcón-Salazar, IE Zaldívar-Huerta… - Sensors and Actuators A …, 2017 - Elsevier
This work reports the morphological, electrical and luminescent characteristics of Light
Emitting Capacitors (LECs) composed by Silicon Rich Oxide (SRO) multilayers. These …

Photoluminescence comparison of SRO-LPCVD films deposited on quartz, polysilicon and silicon substrates

HP Martínez-Hernández, JAL López, MA Mijares… - Journal of …, 2019 - Elsevier
In the present work, photoluminescence spectra of silicon-rich oxide monolayers (SRO 10
and SRO 25) and bilayers (SRO 25/10, SRO 10/25) films deposited on quartz, polysilicon on …

Análisis, diseño, fabricación y caracterización de los elementos básicos para integración de un circuito fotónico totalmente en silicio

DENCCON LA - 2017 - inaoe.repositorioinstitucional.mx
This work studies the monolithic integration on silicon of a light source, an optical waveguide
and a photodetector. The aim is to make a photonic integrated circuit (PIC) using …

Monolithically integrable Si-compatible light sources

J Alarcón-Salazar, L Palacios-Huerta… - Recent Development …, 2018 - books.google.com
On the road to integrated optical circuits, the light emitting device is considered the
bottleneck preventingus from arriving to the fully monolithic photonic system. While the …