The impact of variation in diameter and dielectric materials of the CNT field-effect transistor
MFA Hadi, H Hussin, N Soin - … Journal of Solid State Science and …, 2022 - iopscience.iop.org
In today's semiconductor industry, transistor size has been continuously scaled down due to
the competition between developers to provide a better performance device. Based on …
the competition between developers to provide a better performance device. Based on …
Effects of different oxide thicknesses on the characteristics of CNTFET
The device dimensions have been consistently scaling down since many developing
technologies need smaller and faster-integrated circuits for advancement and improvement …
technologies need smaller and faster-integrated circuits for advancement and improvement …
Carbon Nanotube Field-Effect Transistors (CNFETs): Structure, Fabrication, Modeling, and Performance
The problems associated with attempting to scale down traditional metal oxide field-effect
transistors (MOSFET) have led researchers to look into CNT-based field-effect transistors …
transistors (MOSFET) have led researchers to look into CNT-based field-effect transistors …
Simulations of the CNFETs using different high-k gate dielectrics
In this paper we presented the analysis of Carbon Nanotube Field Effect Transistors
(CNFETs) using various high-k gate dielectric materials. The objective of this work was to …
(CNFETs) using various high-k gate dielectric materials. The objective of this work was to …
Parameterized comparison of carbon nanotube and graphene nanoribbon field effective transistor
R Patel, A Joshi, M Nagariya, A Vyas… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
In this paper, performance analysis of carbon nanotube field-effect transistors (CNTFET) and
graphene nano-ribbon field-effect transistors (GNRFET) is done based on transfer …
graphene nano-ribbon field-effect transistors (GNRFET) is done based on transfer …
[图书][B] The application of neutrosophic hypersoft set TOPSIS (NHSS-TOPSIS) in the selection of carbon nano tube based field effective transistors CNTFETs
Page 1 Neutrosophic Sets and Systems, Vol. 43, 2021 University of New Mexico The
Application of Neutrosophic Hypersoft Set TOPSIS (NHSS-TOPSIS) in the Selection of Carbon …
Application of Neutrosophic Hypersoft Set TOPSIS (NHSS-TOPSIS) in the Selection of Carbon …
Investigation into gate dielectric material using different optimization techniques in carbon nanotube field effect transistors
This paper presents an analysis of gate dielectric materials using different optimization
techniques for carbon nanotube field effect transistors. The selection of the best gate …
techniques for carbon nanotube field effect transistors. The selection of the best gate …
Implementation of Carbon Nanotube Field Effect Transistor and Comparison of Insulator Material With Traditional Silicon Gate Oxides to Improve the Electrical …
Aim: The objective of this research is to enhance the drain current and to eliminate the
leakage current with the use of different dielectric material having a various relative …
leakage current with the use of different dielectric material having a various relative …
Characterizing CNTFET Logic Gate and Adder Performance Trade-offs by considering CNT Tube Diameter and Dielectric Constant
MH Fuad, SS Noor, KMM Hassan… - 2023 IEEE 9th …, 2023 - ieeexplore.ieee.org
CNTFETs are emerging as a possible replacement for conventional silicon-based transistors
due to their unique properties, which include increased electron mobility, high power …
due to their unique properties, which include increased electron mobility, high power …
Analysis of Different Gate Dielectric Materials in Carbon Nanotube Field Effect Transistor (CNFET) using Optimization Technique
The main objective of this paper is to select the suitable gate dielectric material for the
carbon nanotube field effect transistor (CNFET) using Technique for Order Preference by …
carbon nanotube field effect transistor (CNFET) using Technique for Order Preference by …