Brain-inspired neuromorphic computing emulates the biological functions of the human
brain to achieve highly intensive data processing with low power consumption. In particular …

The development of floating‐gate nonvolatile memory (FGNVM) is limited by the charge
storage, retention and transfer ability of the charge‐trapping layer. Here, it is demonstrated …

Low-cost inorganic solution processing for oxide semiconductor thin-film transistors (TFTs) is
crucial for developing next-generation cost-effective, ubiquitous, and flexible electronics …

Flash memory with high operation speed and stable retention performance is in great
demand to meet the requirements of big data. In addition, the realisation of ultrafast flash …

The incorporation of Sn into a sol-gel-based indium-gallium-zinc oxide (IGZO) channel layer
is investigated to improve the electrical characteristics and operational stability of …

The assembly of nanomaterials into thin films is an important area in the nanofabrication of
novel devices. The monodispersity of nanoparticles plays an essential role in the resulting …

Two-dimensional van der Waals materials, with atomic-level thickness and unique electronic
structures, have tremendous potential in electronic device applications, making them highly …

Amorphous InGaZnO (a-InGaZnO) is currently the most prominent oxide semiconductor
complement to low-temperature polysilicon for thin-film transistor (TFT) applications in next …

Floating-gate devices occupy a pivotal position in contemporary electronic systems, owing to
their versatile capabilities in nonvolatile memory storage, analog circuit design, and …

Abstract 3D NAND has been enabling continuous NAND density and cost scaling beyond
conventional 2D NAND since sub‐20‐nm nodes. However, its poly‐Si channel suffers from …