The use of micro‐Raman spectroscopy to monitor non‐invasively GaN, AlGaN and AlN
material parameters for process and growth monitoring/control is demonstrated. Concepts to …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Summary form only given. The InGaN/GaN multiple quantum well (MQW) heterostructure
has become the standard active medium in blue and violet nitride edge-emitting diode …

Wurtzite In x Ga 1− x N (0.01≲ x≲ 0.14) films have been grown by metalorganic vapor phase
epitaxy on sapphire substrates. Integrated photoluminescence intensity and line shapes …

We have investigated the thermal stability of GaN using Raman scattering. Noninvasive
optical monitoring of structural damage to GaN by high-temperature anneals in nitrogen …

The recent achievement of compact blue‐emitting gallium nitride semiconductor lasers is
likely to have far‐reaching technological and commercial effects. The lasers' short …

In this study, indium concentration dependence on Volatile Organic Compounds (VOCs)
interaction were examined in InGaN-GaN multi quantum well structures (MQWs) grown on …

III–V nitrides GaN, AlGaN, InGaN have gained great technological importance for
applications such as blue light emitters1 and high temperature electronic devices. 2 Ion …

A new and exciting resistive gas sensor based on Ni/InGaN/GaN heterostructure, grown by
plasma-assisted molecular beam epitaxy, has been developed to efficiently detect acetone …

We report on spatially resolved optical measurements of high-quality InGaN/GaN multiple
quantum wells under conditions of direct high optical injection (> 10 19 cm− 3) using near …