Performance investigation of elevated source EBG TFET based photosensor for near-infrared light sensing applications
In this manuscript, an elevated source TFET with extended back gate (ES-EBG-TFET) based
photosensor is designed to offer improvement in optical performance for detecting incident …
photosensor is designed to offer improvement in optical performance for detecting incident …
Performance analysis of highly sensitive vertical tunnel FET for detecting light in near-IR range
In this paper, an optically gated vertical tunnel field-effect transistor (OG-VTFET) based
photodetector with different gate oxides is investigated to detect incident light with narrow …
photodetector with different gate oxides is investigated to detect incident light with narrow …
Enhanced optical performance of a dual-drain vertical TFET photosensor for near-infrared light detection
This paper details the optical performance of a dual-drain vertical TFET (DDV-TFET) based
photosensor designed for light detection in the near-infrared (NIR) region (0.7–1.0 μm) …
photosensor designed for light detection in the near-infrared (NIR) region (0.7–1.0 μm) …