In-memory computing with emerging memory devices: Status and outlook
In-memory computing (IMC) has emerged as a new computing paradigm able to alleviate or
suppress the memory bottleneck, which is the major concern for energy efficiency and …
suppress the memory bottleneck, which is the major concern for energy efficiency and …
Nanoscale resistive switching memory devices: a review
S Slesazeck, T Mikolajick - Nanotechnology, 2019 - iopscience.iop.org
In this review the different concepts of nanoscale resistive switching memory devices are
described and classified according to their I–V behaviour and the underlying physical …
described and classified according to their I–V behaviour and the underlying physical …
High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm
Using memristive properties common for titanium dioxide thin film devices, we designed a
simple write algorithm to tune device conductance at a specific bias point to 1% relative …
simple write algorithm to tune device conductance at a specific bias point to 1% relative …
Resistive switching by voltage-driven ion migration in bipolar RRAM—Part II: Modeling
S Larentis, F Nardi, S Balatti… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
Resistive-switching memory (RRAM) based on transition metal oxides is a potential
candidate for replacing Flash and dynamic random access memory in future generation …
candidate for replacing Flash and dynamic random access memory in future generation …
Ultra-fast switching memristors based on two-dimensional materials
The ability to scale two-dimensional (2D) material thickness down to a single monolayer
presents a promising opportunity to realize high-speed energy-efficient memristors. Here …
presents a promising opportunity to realize high-speed energy-efficient memristors. Here …
Modeling the universal set/reset characteristics of bipolar RRAM by field-and temperature-driven filament growth
D Ielmini - IEEE Transactions on Electron Devices, 2011 - ieeexplore.ieee.org
Resistive switching memory (RRAM) devices generally rely on the formation/dissolution of
conductive filaments through insulating materials, such as metal oxides and chalcogenide …
conductive filaments through insulating materials, such as metal oxides and chalcogenide …
Defects in ferroelectric HfO 2
A Chouprik, D Negrov, EY Tsymbal, A Zenkevich - Nanoscale, 2021 - pubs.rsc.org
The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of developing competitive ferroelectric non-volatile memory devices. To date, it …
expectations of developing competitive ferroelectric non-volatile memory devices. To date, it …
Physical electro-thermal model of resistive switching in bi-layered resistance-change memory
Tantalum-oxide-based bi-layered resistance-change memories (RRAMs) have recently
improved greatly with regard to their memory performances. The formation and rupture of …
improved greatly with regard to their memory performances. The formation and rupture of …
TaO x -based resistive switching memories: prospective and challenges
Resistive switching memories (RRAMs) are attractive for replacement of conventional flash
in the future. Although different switching materials have been reported; however, low …
in the future. Although different switching materials have been reported; however, low …
Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors
We show that the SET operation of a unipolar memristor could be explained by
thermophoresis, or the Soret effect, which is the diffusion of atoms, ions or vacancies in a …
thermophoresis, or the Soret effect, which is the diffusion of atoms, ions or vacancies in a …