A multi-component coating composition for a surface of a semiconductor process chamber
component comprising at least one first film layer of a yttrium oxide or a yttrium fluoride …

US10563303B2 - Metal oxy-flouride films based on oxidation of metal flourides - Google
Patents US10563303B2 - Metal oxy-flouride films based on oxidation of metal flourides …

Described herein are articles, systems and methods where a plasma resistant coating is
deposited onto a surface of a porous chamber component and onto pore walls within the …

Described herein are articles, systems and methods where a plasma resistant coating is
deposited onto a surface of a chamber component using an atomic layer deposition (ALD) …

An article comprises a body having a coating. The coating comprises a Y—O—F coating or
other yttrium-based oxy-fluoride coating generated either by performing a fluorination …

Described herein are articles, systems and methods where a plasma resistant coating is
deposited onto a surface of a porous chamber component and onto pore walls within the …

5,527,752 A 6/1996 Reichle et al. 5,846,895 A 12/1998 Gila et al. 5,861,352 A 1/1999 Gila et
al. 6,001,742 A 12/1999 Chang 6,197.683 B1 3/2001 Kang et al. 6,268.448 B1 7/2001 …

Methods of forming metal oxide thin films and related structures are provided. One
embodiment of the methods includes conducting a plurality of cycles of deposition on a …

Embodiments of the present invention relate to an apparatus and method of plasma assisted
deposition by generation of a plasma adjacent a processing region. One embodiment of the …

5,262,610 A 11/1993 Huang et al........... 219/121.43 cyclical deposition process, wherein the
activated precursor 5,306.666 A 4/1994 Izumi gas and a reducing gas are alternately …